Stretchable organic memory: toward learnable and digitized stretchable electronic applications

Lai, Ying‐Chih; Huang, Yi; Lin, Tay-Jyi; Wang, Yi Xian; Chang, Ching‐Ping; Li, Yaoxuan; Lin, Tzu Yao; Ye, Bo Wei; Hsieh, Ya‐Ping; Su, Wei‐Fang; Yang, Ying; Chen, Yang‐Fang

doi:10.1038/am.2013.85

Cited by 77 publications

(53 citation statements)

References 38 publications

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“…2016, 9(2): 401-414 found in areas including large area electronics, wearable devices, sensors, light emitting diodes (LEDs), and batteries [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. To accommodate large mechanical deformations during stretching while maintaining the electrical performance and stability of the system, either the materials themselves or the structures need to be stretchable [1].…”

Section: Introductionmentioning

confidence: 99%

“…To accommodate large mechanical deformations during stretching while maintaining the electrical performance and stability of the system, either the materials themselves or the structures need to be stretchable [1]. The traditional approach to this problem has been to engineer non-stretchable conductors into novel shapes, followed by encapsulation in an elastic material to achieve stretchable performance, which requires optimized conductor design and precise patterning [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

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Facile fabrication of stretchable Ag nanowire/polyurethane electrodes using high intensity pulsed light

et al. 2016

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Silver nanowires (AgNWs) have emerged as a promising nanomaterial for next generation stretchable electronics. However, until now, the fabrication of AgNWbased components has been hampered by complex and time-consuming steps. Here, we introduce a facile, fast, and one-step methodology for the fabrication of highly conductive and stretchable AgNW/polyurethane (PU) composite electrodes based on a high-intensity pulsed light (HIPL) technique. HIPL simultaneously improved wire-wire junction conductivity and wire-substrate adhesion at room temperature and in air within 50 μs, omitting the complex transfer-curing-implanting process. Owing to the localized deformation of PU at interfaces with AgNWs, embedding of the nanowires was rapidly carried out without substantial substrate damage. The resulting electrode retained a low sheet resistance (high electrical conductivity) of <10 Ω/sq even under 100% strain, or after 1,000 continuous stretching-relaxation cycles, with a peak strain of 60%. The fabricated electrode has found immediate application as a sensor for motion detection. Furthermore, based on our electrode, a light emitting diode (LED) driven by integrated stretchable AgNW conductors has been fabricated. In conclusion, our present fabrication approach is fast, simple, scalable, and costefficient, making it a good candidate for a future roll-to-roll process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Facile fabrication of stretchable Ag nanowire/polyurethane electrodes using high intensity pulsed light

et al. 2016

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“…[1][2][3][4] Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates.…”

Section: Introductionmentioning

confidence: 99%

Highly flexible and robust N-doped SiC nanoneedle field emitters

et al. 2015

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Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm − 1 , 1.55 V μm − 1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. NPG Asia Materials (2015) 7, e157; doi:10.1038/am.2014.126; published online 23 January 2015 INTRODUCTIONFlexible electronic devices have attracted extensive attention in recent decades because of their numerous promising applications, such as flexible energy-storage devices, wearable energy-harvesting systems and stretchable electronics. 1-4 Among the emerging technologies, there is considerable interest in flexible field emission (FE) emitters due to their unique lightweight, conformable and flexible nature, which give them the significant advantage of being utilized in roll-up flexible FE displays, 3 e-papers 5 and high-performance X-ray tubes. 6 To enable such next-generation flexible devices, flexible cathodes must be used as the fundamental starting component to replace conventional emitters grown on rigid substrates. These flexible emitters should maintain their original or even better FE properties as well as excellent electrical and mechanical performances after bending, compressing, twisting and stretching. 7,8 To date, a variety of cathodes have been developed based on flexible substrates such as polymers, 9 graphene 7 and carbon fabrics. 10 However, material-and fabrication-related obstacles to the realization of high-performance flexible emitters remain.Silicon carbide (SiC) is an excellent material candidate for constructing advanced FE emitters. SiC is a third-generation wide band-gap semiconductor with excellent physical properties such as high strength and stiffness, high-temperature stability, corrosion resistance and high thermal conductivity. [11][12][13] To date, several studies have explored the FE properties of nanostructured SiC emitters

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“…[18][19][20][21][22] In the field of resistive memories, flexible and twistable devices have already been reported to exhibit stable memory functionality under deformation, 4,17,23,24 but research on stretchable devices is still relatively rare, limited by the ductility of active materials. Chen and his coworkers evaluated a stretchable memory device using a poly(3-butylthiophene)/poly(methyl methacrylate) blending film on a pre-strained poly(dimethylsiloxane) (PDMS) substrate.…”

Section: Introductionmentioning

confidence: 99%

“…Reliable resistive switching behavior and strong data retention ability were obtained as the devices were stretched by up to 50%. 22 Note that the uniformity of the active layer of such stretchable devices may also be limited because two types of polymers are required and could reduce the yield of memory cells in a device. However, stretchable memory devices using donor-acceptor copolymer systems have not yet been developed to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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Diblock copolymers consisting of electron-donating poly[2,7-(9,9-dihexylfluorene)] (PF) rods and electron-withdrawing poly (pendent isoindigo) (Piso) coils were designed and synthesized through a click reaction. The electronic properties and interchain organization of the copolymers could be tuned by varying the PF/Piso ratio (PF 14 -b-Piso n (n = 10, 20, 60 and 100)). The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of the studied polymers were progressively reduced as the length of Piso increased, affecting the charge trapping and intramolecular charge transfer environment between PF and Piso domains. Thermally treated PF 14 -b-Piso n thin films exhibited a clear nanofibrillar structure, and the d-spacing was enhanced systematically as the Piso chain length increased. Resistive memory characteristics were explored with a sandwich indium tin oxide/PF 14 -b-Piso n s/Al device configuration. The enhanced conjugated PF conducting channels led to stable resistance switching behavior, exhibiting volatile SRAM (static random access memory) (PF 14 -b-Piso 10 ) and nonvolatile WORM (write-once-read-many-times) (PF 14 -b-Piso 20 , PF 14 -b-Piso 60 , PF 14 -b-Piso 100 ) characteristics with a large ON/OFF ratio (10 6 ) and a stable retention time (10 4 s). A more appealing feature is that such memory cells were integrated on a soft poly(dimethylsiloxane) substrate, allowing for the development of a stretchable data storage device. Reliable and reproducible electrical characteristics, including SRAM-and WORM-type memories, could be explored as the device was stretched under an applied tensile strain ranging from 0 to 50%. The studied donor-acceptor copolymers indeed showed great potential for stretchable electronic applications with controllable digital information storage characteristics. NPG Asia Materials (2016) 8, e298; doi:10.1038/am.2016.112; published online 26 August 2016 INTRODUCTION Polymer-based electrical bistable memory devices have been extensively studied owing to their advantages of structural flexibility, low-cost, printability and three-dimensional stacking. 1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers. Conjugated block copolymers can effectively manipulate charge storage volatility because of their unique self-organization properties, on the basis of the chemical structures of

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Stretchable organic memory: toward learnable and digitized stretchable electronic applications

Cited by 77 publications

References 38 publications

Facile fabrication of stretchable Ag nanowire/polyurethane electrodes using high intensity pulsed light

Facile fabrication of stretchable Ag nanowire/polyurethane electrodes using high intensity pulsed light

Highly flexible and robust N-doped SiC nanoneedle field emitters

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

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