Stress relaxation of continuous film and narrow line metallizations of aluminum on silicon substrates

Geometric and material nonlinearity during the deformation of micron-scale thin-film bilayers subject to thermal loading

“…Stress relaxation during an isothermal hold has been studied by Hershkovitz et al (1985), Doerner and Nix (1988), Flinn et al (1987), Korhonen et al (1990), Shute and Cohen (1992), Shen and Suresh (1995), Thouless (1995), Koike et al (1998), and Keller et al (1999). Thouless et al (1993) measured stress relaxation of copper ÿlms on a silicon substrate at temperatures ranging from 74 • C to 187 • C. They found that the qualitative behavior was well-described by power law creep˙ = A n , but argued that a mechanistic understanding of the values of A and n that were required was lacking.…”

Line width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines

“…where c(t = 0) is the initial stress at stress relaxation temperature T, & is a characteristic parameter for stress relaxation rate, and r is a stress relaxation time [7][8][9]. relaxation behaviors for different line widths and at different temperatures, it is convenient to compare the characteristic parameter which indicates the rate of stress relaxation.…”

Externally constrained plastic flow in miniaturized metallic structures: A continuum-based approach to thin films, lines, and joints

“…The X-ray diffraction technique can also be used for the purpose [60,64,[83][84][85][86][87][88][89][90][91]. A common form of the stress evolution during temperature cycles is now illustrated.…”