Stress Reduction of Ge&lt;SUB&gt;2&lt;/SUB&gt;Sb&lt;SUB&gt;2&lt;/SUB&gt;Te&lt;SUB&gt;5&lt;/SUB&gt; by Inhibiting Oxygen Diffusion

Park, Young Sam; Lim, Jung Wook; Yang, Woo Seok; Lee, Seung-Yun; Yoon, Sung‐Min; Yu, Byoung Gon

doi:10.2320/matertrans.mra2008042

Cited by 1 publication

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“…If the current smaller than the critical value is delivered, a relatively low resistance value corresponding to the crystalline phase of GeSbTe remains for lack of joule heat causing the phase transition. However, if the applied current reaches to the critical value, then the part of the crystalline GeSbTe film transforms to amorphous by means of a melt-quench process 11) and the resistance increases drastically above 10 5 ohm, as shown in Fig. 6.…”

Section: ¹3mentioning

confidence: 99%

Heating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films

Lee

2013

Mater. Trans.

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This work reports the detailed manufacturing process of polycrystalline SiGe/Si thin film layers and their heating effect on phase transition of GeSbTe chalcogenide films. The SiGe and Si films were grown successively by chemical vapor deposition, and different methods were applied to dope the SiGe films depending on their semiconducting nature because of phosphorus autodoping. Although the minimum dopant concentration for the n-type SiGe films was much higher than that for the p-type SiGe films, the lowest transition currents were measured almost same with both p-and n-type SiGe films. The transition current decreased further with reducing contact area between the GeSbTe and SiGe films. These results indicate that the contact area scaling and the formation of SiGe/Si films with a dopant concentration smaller than a critical value are both required to induce the phase transition of GeSbTe at a submilliampere level of transition current.

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Section: ¹3mentioning

confidence: 99%