Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition

Schliwinski, H.-J.; Pelka, M.; Buchmann, Leandro; Windbracke, W.; Lange, P. J. de; Csepregi, L.

doi:10.1016/0921-5107(92)90194-e

Materials Science and Engineering: B

1992

DOI: 10.1016/0921-5107(92)90194-e

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Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition

H.-J. Schliwinski¹,

M. Pelka²,

Leandro Buchmann³

et al.

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Cited by 10 publications

References 13 publications

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Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Macraflane

Zvanut

1999

Journal of Elec Materi

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Electron paramagnetic resonance studies show that defects are activated in oxidized 3C-SiC and 6H-SiC by heat-treatments at temperatures greater than 800°C in dry (<1 ppm H 2 O) N 2 or O 2 ambients. Annealing in forming gas (7% H 2 , 93% N 2 ) at 700°C completely passivates the centers induced by the dry heattreatment. By contrasting the generation and annealing kinetics for these centers with the well studied Si dangling bond, we suggest that the centers in the oxidized SiC are C dangling bonds created by hydrogen effusion during the dry heat-treatment.

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Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Macraflane

Zvanut

1999

Journal of Elec Materi

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Etching characteristics and mechanical properties of a-SiC:H thin films

Schmid¹,

Eickhoff²,

Richter³

et al. 2001

Sensors and Actuators A: Physical

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The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC

Macfarlane

Zvanut

1997

Applied Physics Letters

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We examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (<10 ppm H2O) N2 heat treatment, and after standard (approximately 50 ppm H2O) Ar annealing. A center is observed following dry heat treatment at temperatures greater than 800 °C. This center is passivated by standard Ar annealing at temperatures greater than 700 °C and regenerated after subsequent dry heat treatment. We suggest that this defect is related to an unpaired electron on a carbon atom created by the release of a hydrogen-related species.

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Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition

Cited by 10 publications

References 13 publications

Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Etching characteristics and mechanical properties of a-SiC:H thin films

The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC

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