Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

Mathurin, Théo; Giordano, Stefano; Dusch, Yannick; Tiercelin, Nicolas; Pernod, Philippe; Preobrazhensky, V.

doi:10.1063/1.4942388

Cited by 26 publications

(37 citation statements)

References 36 publications

(43 reference statements)

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“…Assuming an activity level of 10%, i.e., one in ten transistors switches at any given time on the average, we get 98 1. 75 Therefore, 89 91 130 aJ 1. 75 , which means that a transistor of circa 2015…”

Section: Other Needs For Energy Efficient Computing Devicesmentioning

confidence: 99%

“…When an electrically shorted gate pad pair is activated with a voltage, either compressive or tensile stress is generated in the intervening magnetostrictive nanomagnet (lying between the pair) in the direction joining the centers of the pair, depending on the voltage polarity. Assume that the magnetostriction 75 coefficient of the nanomagnet is positive. In that case, compressive stress will drive the magnetization state to an orientation perpendicular to the stress direction, i.e.…”

Section: Equality Bit Comparatorsmentioning

confidence: 99%

“…A standing surface acoustic wave increases the velocity of domain wall motion in these thins films by an order of magnitude compared to magnetic field alone [74]. Furthermore, a recent proposal suggests strain gradient produced by electric fields can move domain walls [75] and thus switch nanomagnets.…”

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confidence: 97%

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Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

et al. 2018

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The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.

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Section: Other Needs For Energy Efficient Computing Devicesmentioning

confidence: 99%

Section: Equality Bit Comparatorsmentioning

confidence: 99%

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Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

et al. 2018

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“…Domain wall movement can also be explored for energy harvesting by converting stress into changes in magnetization and thus into electrical voltage. In the energy harvesting investigations reported so far, domain wall motion is accomplished only in multiferroic structures, where stress was induced by providing an electrical energy to the ferroelectric layers . Employing significant amounts of electrical energy, however, defeats the purpose of energy harvesting.…”

Section: Introductionmentioning

confidence: 99%

“…

domains store information states and the information is read by moving the domains. [19][20][21][22][23][24][25] Employing significant amounts of electrical energy, however, defeats the purpose of energy harvesting. In the energy harvesting investigations reported so far, domain wall motion is accomplished only in multiferroic structures, where stress was induced by providing an electrical energy to the ferroelectric layers.

…”

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confidence: 99%

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

Bhatti

Liu

et al. 2018

Adv Elect Materials

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domains store information states and the information is read by moving the domains. [11,[14][15][16][17][18] Domain wall movement can also be explored for energy harvesting by converting stress into changes in magnetization and thus into electrical voltage. In the energy harvesting investigations reported so far, domain wall motion is accomplished only in multiferroic structures, where stress was induced by providing an electrical energy to the ferroelectric layers. [19][20][21][22][23][24][25] Employing significant amounts of electrical energy, however, defeats the purpose of energy harvesting. Moreover, ceramic ferroelectric layers, like PZT, require high-temperature deposition or postdeposition annealing (>400 °C) under severe oxidation conditions, which inevitably degrade the magnetic properties. [26] Therefore, stress-induced motion of domain walls in pure magnetic films without the use of ferroelectric layers and a supplied energy is a better approach for self-power generation. In the past, amorphous magnetic materials have been studied for domain wall dynamics under stress. [27,28] Pickup of voltage using a pickup coil was used for sensing the domain wall motion. [29][30][31] An analytical model for stress-induced transverse domain wall movement in ferromagnetic nanostripe has also been proposed. [32] In this article, we report that the domain walls in magnetic microwires made of crystalline ferromagnetic films can be moved by merely applying mechanical stress. The key recipes for the successful observation of such domain wall movement are: (i) a magnetic stack of CoNi/Fe 65 Co 35 /CoNi with which we have controlled the microstructures, (ii) an induced magnetic easy axis that we set by the direction of fringing magnetic field during the deposition (see the Supporting Information), and (iii) the use of flexible substrates with which we could enhance the stress delivered to the device from ambient sources, which is otherwise impossible with rigid substrates like Si. With a prototype device, we have shown in this article, the motion of domain walls under applied stress and have harvested energy.

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Transverse domain wall dynamics in hybrid piezoelectric/ferromagnetic devices

Shahu

Dubey

2023

Math Methods in App Sciences

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This work investigates the static and dynamic features of transverse domain walls in a magnetostrictive, linear elastic isotropic ferromagnetic material under the action of magnetic field (axial and transverse) and electric current. The investigation is done in the framework of the extended Landau–Lifshitz–Gilbert equation by taking into account the effects of stresses induced by a piezoelectric actuator and Rashba spin‐orbit torque caused by structural inversion asymmetry. First, we obtain the expression of magnetization orientation into the two faraway domains, then characterize the static magnetization profile under the action of magnetoelastic and transverse magnetic fields. Next, we introduce a trial function (Schryer and Walker type). After that, by adopting the small angle approximation formalism, we derive the explicit expression of key quantities such as propagating transverse domain wall profile, excitation angle, transverse domain wall velocity, mobility, and displacement. Finally, we present the numerical illustrations of derived analytical results and find that they are in qualitatively good agreement with the recent numerical simulations and experimental observations.

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Stress-mediated magnetoelectric control of ferromagnetic domain wall position in multiferroic heterostructures

Cited by 26 publications

References 36 publications

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies

Stress‐Induced Domain Wall Motion in FeCo‐Based Magnetic Microwires for Realization of Energy Harvesting

Transverse domain wall dynamics in hybrid piezoelectric/ferromagnetic devices

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