Stress Measurements in Silicon Substrates with TiSi₂ Patterns Using Raman Microprobe

Abstract

The horizontal and depth distributions of the stress induced in silicon substrates with titanium silicide ( TiSi2) patterns were evaluated using the Raman microprobe. Tensile stress is generated beside the TiSi2 pattern. The tensile stress reaches a maximum value of 150–350 MPa at the distance of ∼0.5 µ m from the edge of the TiSi2 pattern, and the range of the tensile stress is as far as 2–4 µ m from the edge. Under the TiSi2 pattern, compressive stress is generated. The compressive stress becomes a maximum value of 25–75 MPa at the TiSi2/Si interface, and the depth of the compressive stress extends to 2–1 µ m.

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