Stress Measurement in Thin Films Using Wafer Curvature: Principles and Applications

Chason, E.

doi:10.1007/978-981-10-6855-3_49-1

Handbook of Mechanics of Materials 2018

DOI: 10.1007/978-981-10-6855-3_49-1

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Stress Measurement in Thin Films Using Wafer Curvature: Principles and Applications

E. Chason

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Cited by 2 publications

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“…in situ stress measurement. 3 To well reveal deformation and failure mechanisms, in situ stress measurement becomes an effective tool reflecting the stress evolution in detail. It has been widely applied to various physicochemical processes, such as deposition (electrodeposition, 4 evaporation, [5][6][7] sputter deposition 8 ), anodic oxidation, 9,10 and lithiation 11 ).…”

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confidence: 99%

In Situ Stress Measurement of Ni Electrodeposition Using Lateral Shearing Interferometry

Qiang¹,

Luo²,

Dong³

et al. 2020

J. Electrochem. Soc.

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In-situ stress measurement has a significant benefit in revealing the deformation and failure mechanism during the deposition process. However, it is difficult to detect an ultrathin deposit and measure deposits of different scales simultaneously. Here, lateral shearing interferometry was used for in situ stress measurement of Ni deposits. we demonstrated that this method showed great stability and sensitivity during in situ process. Additionally, the accuracy of measurement was also been improved in terms of the measurement error (2.96%) and fluctuation (0.00035) of curvature radius. The system was capable of the measuring radius of curvature as large as 250 m. Theoretical calculation and experimental results coherently suggested that the thickness of measurable deposits can be diminished by decreasing the elastic modulus and thickness of the substrate. PMMA substrates can be used to measure the stress evolution of deposits with a thickness of more than 10 nm. Moreover, suitable substrate material and thickness for stress measurement of deposits with different scales can be selected by theoretical calculation before the experiment. This novel method provides valuable insights into the in situ stress towards the ultrathin deposit and paves the way to further understanding on the mechanism of deformation and failure of the deposition process in different states.

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mentioning

confidence: 99%

In Situ Stress Measurement of Ni Electrodeposition Using Lateral Shearing Interferometry

Qiang¹,

Luo²,

Dong³

et al. 2020

J. Electrochem. Soc.

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Extension of the Stoney formula for the incremental stress of thin films

Qiang

Jiang

Dong

et al. 2021

Applied Physics Letters

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The curvature-based technique is widely used to monitor stresses in thin film-substrate structures. The fundamental theory is based on the Stoney formula and its extensions, which mostly represents the average stress in thin films. However, the characterization of incremental stresses has not been clearly described, which leads to significant limitations in its application scope. Here, a formula for the incremental stress of thin films is proposed by discretizing the film growth layer for use in arbitrary modulus and thickness ratios. In specific cases, this formula can be manifested as Stoney's and Freund's formulas. The stress of electrodeposited Ni with different current densities was measured in situ for substrates at different elastic moduli and thicknesses. The formula was proven to be a more accurate expression of the incremental stress compared with averaging using Freund's formula or from the slope method. Furthermore, the proposed formula can be applied to arbitrary modulus and thickness ratios. This method provides valuable insight to monitor stresses in thin films and paves the way for further understanding the mechanisms of stress generation.

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Stress Measurement in Thin Films Using Wafer Curvature: Principles and Applications

Cited by 2 publications

References 76 publications

In Situ Stress Measurement of Ni Electrodeposition Using Lateral Shearing Interferometry

In Situ Stress Measurement of Ni Electrodeposition Using Lateral Shearing Interferometry

Extension of the Stoney formula for the incremental stress of thin films

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