Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors

Cerdeira, F.; Buchenauer, C.J.; Pollak, Fred H.; Cardona, M.

doi:10.1103/physrevb.5.580

Cited by 888 publications

(413 citation statements)

References 11 publications

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“…It is important to note that the resulting phonon eigenvectors are orthogonal: [35][36][37][38] the E 2g + is perpendicular to the applied strain ͑and thus experiencing smaller softening͒ and the E 2g − parallel to it. This is analogous to the effect of curvature on the G peak of carbon nanotubes.…”

Section: B Secular Equation and Grüneisen Parametersmentioning

confidence: 99%

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

et al. 2009

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We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E 2g optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G + and G − , by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2DЈ bands also redshift but do not split for small strains. We study the Grüneisen parameters for the phonons responsible for the G, D, and DЈ peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance

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Section: B Secular Equation and Grüneisen Parametersmentioning

confidence: 99%

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

et al. 2009

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“…In this article we propose another method which involves two laser lines and allows one to determine absolute phonon energies ͑and their shifts͒ with 0.1 cm Ϫ1 accuracy. The method doubles the shift of the lines, which is important when we consider small effects of the order of 1 cm Ϫ1 ͑the typical range in uniaxial stress experiments 7,8 ͒. It works well at room temperature ͑and above͒ for all materials that have a decent Raman signal so the anti-Stokes line can be measured.…”

Section: Introductionmentioning

confidence: 99%

High accuracy Raman measurements using the Stokes and anti-Stokes lines

Trzeciakowski

Martı́nez-Pastor

Cantarero

1997

Journal of Applied Physics

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We show that by measuring the separation between the Stokes and anti-Stokes peaks excited by two different laser lines we obtain a very precise determination of absolute phonon energies. The method is useful for measuring small changes of these energies with strain, temperature, laser power, etc. It doubles the changes and avoids the necessity of using the reference lines in the Raman spectra. The method can be applied for the determination of phonon deformation potentials, for the characterization of strained heteroepitaxial layers, and for micro-Raman analysis of strain in silicon integrated circuits. We give examples of phonon shifts in Si, Ge, GaAs, InAs, and GaP as a function of applied biaxial strain, laser power, and temperature.

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“…In fact, this significant blueshift of the Raman peak (on about 8-9 cm ¡1 ) can be explained by mechanical stresses undergone by the NPs from the matrix side. [15] By taking into account hydrostatic model describing the exercised stresses, [16] which is relatively convenient for the incorporated zero-dimensional NPs, we have found that this important compressive stress has the value about 1.9 GPa.…”

Section: Resultsmentioning

confidence: 99%

Study of silicon nanoparticles in dielectric oxides obtained by sol–gel route

Jettanasen

2015

Journal of Experimental Nanoscience

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Silicon nanoparticles (Si-NPs) obtained by electrochemical etching of silicon wafer were incorporated into various dielectric matrices using solÀgel method. To attain a wide range of dielectric constant and band gap energy, three matrices are selected (SiO 2 , ZrO 2 and TiO 2 ) and the Si-NPs were incorporated in these matrices at different concentrations. Structural studies by transmission electron microscopy and Raman spectroscopy confirm the presence of Si-NPs in the matrices. Moreover, the significant compressive stress induced by the matrix is observed. Photoluminescence (PL) studies show that Si-NPs preserve their luminescent properties in SiO 2 matrix and ZrO 2 matrix but not in TiO 2 matrix. The PL peak position depends not only on the dimension of Si-NPs but also depends on their concentrations. This is due to the coupling effect between the nanoparticles which increases with concentration.

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Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors

Cited by 888 publications

References 11 publications

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

High accuracy Raman measurements using the Stokes and anti-Stokes lines

Study of silicon nanoparticles in dielectric oxides obtained by sol–gel route

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