Stress induced leakage current analysis via quantum yield experiments

Section: Influence Of Defects and Image-force Corrections On The Ementioning

confidence: 99%

Enhancement of the effective tunnel mass in ultrathin silicon dioxide layers

Städele

Sacconi

Carlo

et al. 2003

“…[2][3][4][5] The elastic or inelastic character of the process has been the subject of some controversy, but it is now generally agreed that energy relaxation is induced in the traps after the trapping of electrons from the conduction band of the cathode. 4,5 Average energy loss values are measured by the shift towards higher entrance biases in the Fowler-Nordheim regime of the SILC component of the tunnel current 3 and by the quantum yield of impact ionization for electrons in silicon. 4,5 Several models have been developed to account for SILC.…”

Section: Introductionmentioning

confidence: 99%

“…4,5 Average energy loss values are measured by the shift towards higher entrance biases in the Fowler-Nordheim regime of the SILC component of the tunnel current 3 and by the quantum yield of impact ionization for electrons in silicon. 4,5 Several models have been developed to account for SILC. Most of these use the same capture cross section for all the traps ͑independent of the position and bias͒ as a free parameter 2,6,7 or do not calculate the energy loss, but take it as a fixed parameter 6 which matches the measured value of the average energy loss.…”

Section: Introductionmentioning

confidence: 99%

Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

Jiménez-Molinos

Palma

Gámiz

et al. 2001

A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps ͑energy level and concentration͒ and the Huang-Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler-Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied.

“…2 For p ϩ -poly gate p-MOSFETs the inelastic trap-assisted tunneling mechanism in the stressinduced leakage current mode has also been proposed. 3 Recently, it has been reported that quantum yield experiments can be performed directly on a triple well structure of n-channel metal-oxide-semiconductor field-effect transistors ͑n-MOSFETs͒. 4 Therefore, this work focuses on the gate-todrain/source overlap regions of an n-MOSFET.…”

Section: Edge Quantum Yield In N-channel Metal-oxide-semiconductor Fimentioning

confidence: 99%

Edge quantum yield in n-channel metal-oxide-semiconductor field-effect transistor

Kang

Chang

et al. 2004

The quantum yield of impact ionization is performed on an n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) by a carrier separation measurement. When the n-MOSFET is biased in accumulation, the carrier separation measurement demonstrates that the gate current mainly originates from the electrons injected into the underlying drain/source overlap regions. The measured substrate current is due to excess holes originating from the impact ionization of the injected electrons in the overlap regions. Therefore, the quantum yield in the overlap regions can be determined by the ratio of the substrate current to the gate current. It is well matched with the theoretical calculation of quantum yield.