Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Abstract

Electron paramagnetic resonance ͑EPR͒ studies have been made of the stress-induced alignment and the subsequent recovery of the double donor ͑AA1 EPR center͒ that is formed in float-zone silicon following hydrogen implantation and annealing for ϳ20 min at a temperature above ϳ300°C. The obtained data compare with those of the thermal double donor ͑NL8 EPR center͒. The activation energy for atomic reorientation of the (HDD ϩ ) AA1 defect is (2.3Ϯ0.1) eV. The reorientation rate is greater than that of the (TDD ϩ ) NL8 defect formed in Czochralski Si by a factor of 10 4 . Both centers have C 2v symmetry and piezospectroscopic measurements reveal a large compressional strain along their ͓001͔ ͑three-axis͒ direction. However, in contrast to the NL8, the core of the AA1 defect produces also large compressional strain along its one-axis parallel to ͓110͔ direction. These data demonstrate unambiguously that the two centers have different molecular structures, in spite of their similar EPR spectra and electrical properties. It is suggested that the two centers have similar core structures ͑a ͗001͘-oriented self-interstitials complexes͒, while the outer shell structure incorporates hydrogen or oxygen atoms, respectively.

Fabrication of Medium Power Insulated Gate Bipolar Transistors Using 300 mm Magnetic Czochralski Silicon Wafers

“…The microscopic structure of the different donor types is still not completely known. However, hydrogen/vacancy complexes and also self‐interstitial/hydrogen complexes were considered as being involved in the formation of the donor‐like complexes.…”

“…In this process, protons are implanted through the wafer surface with defined energy, which leads to an accumulation of hydrogen atoms in the end‐of‐range depth defined by the implantation energy. During annealing at temperatures in the range of 300–450 °C, various types of hydrogen‐induced shallow donors are created . The microscopic structure of the different donor types is still not completely known.…”

“…During annealing at temperatures in the range of 300-450 C, various types of hydrogeninduced shallow donors are created. [17][18][19][20][21][22][23] The microscopic structure of the different donor types is still not completely known. However, hydrogen/vacancy complexes and also selfinterstitial/hydrogen complexes [21] were considered as being involved in the formation of the donor-like complexes.…”