Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

Abstract

Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiN x thin films: one that measures the stress-induced substrate curvature, and the other that takes advantage of the stress-induced deformation of freestanding diagnostic microstructures. A general linear dependence of residual stress on SiN x deposition temperature is observed, with the magnitude of stress changing linearly from ∼300 MPa tensile stress to ∼600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 • C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the substrate curvature method deviate from the linear dependence for deposition temperatures below 200 • C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 • C. Stress uniformity over the deposition area is also investigated.

Precision AFM Measurements of Dynamic Interactions between Deformable Drops in Aqueous Surfactant and Surfactant-Free Solutions

“…Because of limitations in manufacturing tolerances, this assumption is not met in practice for cantilevers made from silicon nitride. 38,39 In a detailed study of over 100 V-shaped silicon nitride cantilever samples of the same shape fashioned from the same Comparative studies on calibration methods also found variations of this magnitude for rectangular silicon nitride cantilevers. 41,42 Hence for precise force determinations, empirical calibration methods to determine the spring constant of a cantilever should be avoided.…”

Mechanical and electrical properties of DC magnetron sputter deposited amorphous silicon nitride thin films

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Packaging of an iron-gallium (Galfenol) nanowire acoustic sensor

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