Stress effects on n-p-n transistor parameters

Mahmoud, Aly A.; Calabrese, Clark; Tudor, J.R.

doi:10.1109/proc.1971.8384

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On a different day, repeat the measurement outlined in a thru j but use the transistors of Group B in step g (2) . 7.…”

Section: Measurementsmentioning

confidence: 99%

Measurement of transit time and related transistor characteristics

Sawyer¹,

Rogers²,

Huntley³

1973

View full text Add to dashboard Cite

When US Government drawings, specifications, or other data are used for any purpose other than a definitely related Government procurement operation, the Government thereby incurs no responsibility nor any obligation whatsoever, and the fact that the Government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data, is not to be regarded by implication or otherwise, as in any manner licensing the holder or any other person or corporation, or conveying any rights or permission to manufacture, use, or sell any patented invention that may in any way be related thereto. DO NOT RETURN THIS COPY. RETAIN OR DESTROY.

show abstract

“…On a different day, repeat the measurement outlined in a thru j but use the transistors of Group B in step g (2) . 7.…”

Section: Measurementsmentioning

confidence: 99%

Measurement of transit time and related transistor characteristics

Sawyer¹,

Rogers²,

Huntley³

1973

View full text Add to dashboard Cite

show abstract

Effect of compressive stress on silicon bipolar devices

Kanda

1973

Journal of Applied Physics

View full text Add to dashboard Cite

The calculation for the compressive stress dependence of silicon diode current is refined for the 〈100〉 and 〈111〉 crystal orientations. The stress dependence of the density-of-states effective masses of hole bands is taken into account on the basis of Hasegawa's theory. An anomalous peak is predicted at a stress of ∼ 109 dyn/cm2 due to the stress dependence of the heavy hole effective masses. For the 〈111〉 orientation, a small minimum appears at a stress of ∼ 108 dyn/cm2. The stress dependence of the common-emitter transistor current gain β can be explained by the combined effects of the stress dependence of the emitter efficiency related to the above-mentioned calculation and the stress dependence of the base transport factor. The difference of stress dependence of β between n-p-n and p-n-p transistors can also be explained. It is predicted that β goes through a minimum at a stress of ∼ 109 dyn/cm2. Suggestions concerning thermal stress on transistors in large-scale integration are made.

show abstract

Stress effects on n-p-n transistor parameters

Cited by 2 publications

References 0 publications

Measurement of transit time and related transistor characteristics

Measurement of transit time and related transistor characteristics

Effect of compressive stress on silicon bipolar devices

Contact Info

Product

Resources

About