Stress effects on electronic properties of GaAs thin film

Abstract

We have calculated the density of the quantum state in the conduction band (N C ) for series stress addition to GaAs thin film along [100], [010] and [001] direction. We present here the results of our investigation of the electronic parameter affected by the stress. Within the range of 0.02-0.2 GPa, we find that the value of N C decreases about 1.0 3 10 21 cm -3 from the free status of films. The results reveal that the stresses on GaAs film are extremely important and impact its electronic properties. KeywordsDensity of the quantum state, gallium arsenide film, stress effects Date