Stress Effects on As Activation in Si

Abstract

We studied stress effects on As activation in silicon using density functional theory. Based on lattice expansion coefficient, we calculated the formation energy change due to applied stress and plotted the stress dependence of the As m V concentration. We found that biaxial stress results in a minimal impact on As activation, which is consistent with experimental observations by Sugii et al. [J. Appl. Phys. 96, 261 (2004)], who found no change in the As activation under tensile stress.