2002
DOI: 10.1016/s0167-9317(01)00585-8
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Stress control of sputter-deposited Mo–N films for micromechanical applications

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Cited by 24 publications
(29 citation statements)
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“…In contrast, Kattelus et al [9] have reported compressive effective stresses in Mo-N films from 200 to 300 nm thick deposited by d.c. reactive sputtering for all compositions and structures of films from amorphous state (13%-17% N2) to crystalline phase (26% N2) (Section 4.1.1). However, the effective stress value for amorphous state can be tailored from compressive through zero into tensile by adding further argon gas into the deposition chamber.…”
Section: γ-Mo2n Phasementioning
confidence: 85%
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“…In contrast, Kattelus et al [9] have reported compressive effective stresses in Mo-N films from 200 to 300 nm thick deposited by d.c. reactive sputtering for all compositions and structures of films from amorphous state (13%-17% N2) to crystalline phase (26% N2) (Section 4.1.1). However, the effective stress value for amorphous state can be tailored from compressive through zero into tensile by adding further argon gas into the deposition chamber.…”
Section: γ-Mo2n Phasementioning
confidence: 85%
“…Kattelus et al [9] have developed a deposition process, which allows the directional dependence in intrinsic film stress to be controlled for applications in micromachining. The films are deposited in (Ar-N2) gas mixture with an Ar partial pressure of 0.2 Pa using a dc sputtering system.…”
Section: Reactive Sputtering Methodsmentioning
confidence: 99%
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