Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane

Guan, Dong; Bruccoleri, Alex R.; Heilmann, Ralf K.; Schattenburg, Mark L.

doi:10.1088/0960-1317/24/2/027001

Cited by 26 publications

(24 citation statements)

References 16 publications

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“…These are all aimed at either reducing the reactivity of strained Si-O groups or preventing the diffusion of water to the reactive sites. [29,30] For our present aims, the use of alternating or capping layers is less desirable, since the membranes are in some cases patterned with pores. Moreover, the use of a nitride layer would likely diminish the optical quality of the membrane.…”

Section: Resultsmentioning

confidence: 99%

“…Our general aim in this study is to fabricate a robust and tensile ultrathin (100–300 nm) porous SiO 2 membrane. It has been shown that the film stress of SiO 2 layers from tetraethoxysilane (TEOS, Si(OC 2 H 5 ) 4 )-based plasma-enhanced chemical vapor deposition (PE-CVD) can be controlled through the use of a dual frequency deposition method [28,29]. Alternating layers are deposited with high-frequency (HF, 13.56 MHz) and low-frequency (LF, 50–400 kHz) plasmas using two separate RF power supplies.…”

Section: Introductionmentioning

confidence: 99%

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Ultrathin transparent membranes for cellular barrier and co-culture models

et al. 2017

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Typical in vitro barrier and co-culture models rely upon thick semi-permeable polymeric membranes that physically separate two compartments. Polymeric track-etched membranes, while permeable to small molecules, are far from physiological with respect to physical interactions with co-cultured cells and are not compatible with high-resolution imaging due to light scattering and autofluorescence. Here we report on an optically transparent ultrathin membrane with porosity exceeding 20%. We optimize deposition and annealing conditions to create a tensile and robust porous silicon dioxide membrane that is comparable in thickness to the vascular basement membrane (100–300 nm). We demonstrate that human umbilical vein endothelial cells (HUVECs) spread and proliferate on these membranes similarly to control substrates. Additionally, HUVECs are able to transfer cytoplasmic cargo to adipose-derived stem cells when they are co-cultured on opposite sides of the membrane, demonstrating its thickness supports physiologically relevant cellular interactions. Lastly, we confirm that these porous glass membranes are compatible with lift-off processes yielding membrane sheets with an active area of many square centimeters. We believe that these membranes will enable new in vitro barrier and co-culture models while offering dramatically improved visualization compared to conventional alternatives.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrathin transparent membranes for cellular barrier and co-culture models

et al. 2017

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“…No significant changes were observed. Silicon oxide stress can change significantly due to moisture absorption [33,34], potentially leading to curvature variations of oxide structures with time. However, the cantilevers of this work do not leave any oxide exposed to ambient air.…”

Section: F Curvature Versus Timementioning

confidence: 99%

Curvature of BEOL Cantilevers in CMOS-MEMS Processes

Valle

Fernandez

Madrenas

et al. 2017

J. Microelectromech. Syst.

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This article presents the curvature characterization results of released back-end-of-line (BEOL) 5 µm-wide cantilevers for two different 0.18 µm 1P6M complementary metal-oxide semiconductor microelectromechanical systems (CMOS-MEMS) processes. Results from different runs and lots from each foundry are presented. The methodology and accuracy of the characterization approach, based on optical measurements of test cantilever curvature are also discussed. Special emphasis is given to the curvature average and variability as a function of the number of stacked layers. Analythical equations for modeling the bending behavior of stacked cantilevers as a function of the tungsten (W) vias that join the metal layers are presented. In addition, the effect of various post-processing conditions and design techniques on the curvature of both single and stacked cantilevers is analyzed. In particular, surpassing certain timedependent temperature stress conditions after release lead to curvature shifts larger than one order of magnitude. Also, the W via design was found to strongly affect the curvature of the test cantilevers.

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“…For example, by making structure of heat treatment the purpose of minimization stress [7,12]. To determine nature of occurrence of mechanical stresses carried out comparative analysis of stress values and value of thermal stress calculated in TCAD software.…”

Section: Figure 4 the Distribution Of Mechanical Stresses In The Wafermentioning

confidence: 99%

Non-Contact Technique for Determining the Mechanical Stress in thin Films on Wafers by Profiler

Djuzhev

Dedkova

Gusev

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. This paper presents an algorithm for analysis of relief for the purpose of calculating mechanical stresses in a selected direction on the plate in the form of software package Matlab. The method allows for the measurement sample in the local area. It provides a visual representation of the data and allows to get stress distribution on wafer surface. Automated analysis process reduces the likelihood of errors researcher. Achieved time saving during processing results. In carrying out several measurements possible drawing card plate to predict yield crystals. According to this technique done in measurement of mechanical stresses of thermal silicon oxide film on a silicon substrate. Analysis of the results showed objectivity and reliability calculations. This method can be used for selecting the optimal parameters of the material deposition conditions. In software of device-technological simulation TCAD defined process time, temperature and oxidation of the operation of the sample environment for receiving the set value of the dielectric film thickness. Calculated thermal stresses are in the system silicon-silicon oxide. There is a good correlation between numerical simulations and analytical calculation. It is shown that the nature of occurrence of mechanical stress is not limited to the difference of thermal expansion coefficients of materials. IntroductionTechnologies of micromechanics or microelectromechanical systems (МEМS) and integrated circuits (IC) develop quickly [1]. The mechanical stresses arising during manufacturing of IC and МEМS devices on Si plates have a strong impact on their reliability and dynamic characteristics [2][3][4].Deformation occurs at temperature gradient in the structure, due to the difference between the coefficients of thermal linear expansion of different layers. Magnetostrictive effect, inverse piezoelectric effect or result of action of external forces are reason for strain. As a result, tensile stress in film structure typically results in film cracking or delamination. On the other hand, stress can increase the limit of the system of elasticity, fatigue strength, corrosion-mechanical stability, transistor performance. Therefore, it is important to evaluate and control the amount of stress, not only to avoid damage to device [2,5], but also to improve product specifications.

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Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane

Cited by 26 publications

References 16 publications

Ultrathin transparent membranes for cellular barrier and co-culture models

Ultrathin transparent membranes for cellular barrier and co-culture models

Curvature of BEOL Cantilevers in CMOS-MEMS Processes

Non-Contact Technique for Determining the Mechanical Stress in thin Films on Wafers by Profiler

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