2000
DOI: 10.1002/1099-0488(20001115)38:22<2879::aid-polb30>3.3.co;2-1
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Stress behaviors and thermal properties of polyimide thin films depending on the different curing process

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Cited by 12 publications
(17 citation statements)
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“…Research conducted over the past decade has understood the importance of considering the polymer film morphological contributions to the residual stress as well as its moisture‐induced stress–relaxation behavior of polymer films 5, 17–20. Rigid polymers such as poly( p ‐phenylene pyromellitimide) (PMDA‐PDA) and poly( p ‐phenylene biphenyltetracaboximide) (BPDA‐PDA) showed high chain rigidities and orders with relatively low stress, which are highly required in the fabrication of microelectronic devices 21, 22.…”
Section: Introductionmentioning
confidence: 99%
“…Research conducted over the past decade has understood the importance of considering the polymer film morphological contributions to the residual stress as well as its moisture‐induced stress–relaxation behavior of polymer films 5, 17–20. Rigid polymers such as poly( p ‐phenylene pyromellitimide) (PMDA‐PDA) and poly( p ‐phenylene biphenyltetracaboximide) (BPDA‐PDA) showed high chain rigidities and orders with relatively low stress, which are highly required in the fabrication of microelectronic devices 21, 22.…”
Section: Introductionmentioning
confidence: 99%
“…The residual stresses of PI and PAIs on a Si wafer were measured by a thin film stress analyzer (TFSA) . The samples were heated at a rate of 10 °C min −1 from 25 to 300 °C.…”
Section: Methodsmentioning
confidence: 99%
“…The residual stress is the most important property in the microelectronics industry because it causes cracking and delamination between the polyimide and substrate. Therefore, the residual stress is directly connected to the reliability of the product and should be controlled to be the same as that of the substrate . In the past, extensive research has focused on curing processes and the creation of hybrid materials to reduce the residual stress.…”
Section: Introductionmentioning
confidence: 99%
“…The residual stresses of the films were measured with a thin‐film stress analyzer 30–33. The curvatures of the Si wafers with and without films were measured at room temperature with a HeNe laser beam in the temperature range of 25–220 °C.…”
Section: Methodsmentioning
confidence: 99%