Stress Analysis Using Finite Element Modeling of a Novel RF Microelectromechanical System Shunt Switch Designed on Quartz Substrate for Low-voltage Applications

Singh, Tejinder; Khaira, Navjot K.; Sengar, Jitendra Singh

doi:10.4313/teem.2013.14.5.225

Cited by 21 publications

(5 citation statements)

References 14 publications

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“…In the perforated graphene beam, we varied the hole length HL , hole width HW , distance between two holes DL and number of hole column CN . This perforation concept is expected to reduce the biaxial residual stress and the graphene beam stiffness, thus contributing to the reduction of graphene beam buckling-effect to increase the switch lifetime and reduced actuation pull-in voltage [ 24 ]. The schematic configuration and side view of the graphene-based NEM switch is illustrated in Figure 1 a,b respectively.…”

Section: Methodsmentioning

confidence: 99%

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

et al. 2017

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The miniaturization trend leads to the development of a graphene based nanoelectromechanical (NEM) switch to fulfill the high demand in low power device applications. In this article, we highlight the finite element (FEM) simulation of the graphene-based NEM switches of fixed-fixed ends design with beam structures which are perforated and intact. Pull-in and pull-out characteristics are analyzed by using the FEM approach provided by IntelliSuite software, version 8.8.5.1. The FEM results are consistent with the published experimental data. This analysis shows the possibility of achieving a low pull-in voltage that is below 2 V for a ratio below 15:0.03:0.7 value for the graphene beam length, thickness, and air gap thickness, respectively. The introduction of perforation in the graphene beam-based NEM switch further achieved the pull-in voltage as low as 1.5 V for a 250 nm hole length, 100 nm distance between each hole, and 12-number of hole column. Then, a von Mises stress analysis is conducted to investigate the mechanical stability of the intact and perforated graphene-based NEM switch. This analysis shows that a longer and thinner graphene beam reduced the von Mises stress. The introduction of perforation concept further reduced the von Mises stress at the graphene beam end and the beam center by approximately ~20–35% and ~10–20%, respectively. These theoretical results, performed by FEM simulation, are expected to expedite improvements in the working parameter and dimension for low voltage and better mechanical stability operation of graphene-based NEM switch device fabrication.

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Section: Methodsmentioning

confidence: 99%

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

et al. 2017

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“…Shunt capacitive switches are used before each output port to offer high isolation [ 12 ] in the proposed SP4T switch design. The capacitive MEMS switch used in each arm is shown in Figure 6 .…”

Section: Capacitive Switchesmentioning

confidence: 99%

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Singh

Khaira

2014

The Scientific World Journal

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This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

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“…The role of perforation is to increase the flexibility of switch [3]. It is used to reduce the squeeze film damping and increase the switching speed of MEMS switch [3]. These switches are categorized as Capacitive and Ohmic contact and the signal flows in series and shunt configuration [4].…”

Section: Introductionmentioning

confidence: 99%

“…Normally more than one perforation is a pattern used to design the switch. The role of perforation is to increase the flexibility of switch [3]. It is used to reduce the squeeze film damping and increase the switching speed of MEMS switch [3].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Perforated RF MEMS Switch

Saxena

Agrawal

2015

Procedia Computer Science

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MEMS are the Micro Electronic mechanical system or in general terms it is also known as Micro electronic mechanical switch. MEMS have classified in two types of switch that is series switch and shunt switch .The cantilever is a series type switch whereas the fixed-fixed beam is shunt type switch. Fixed-Fixed beam is the element that is fixed at both anchor ends. The electrostatic actuation process occurs on the switch due to which switch deflects from its original position. The stiction problem occurs in MEMS switches which have been reduced by the proposed design. The perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. As the voltage increases the switch moves to downward z-direction .The displacement is produced in the switch as direction of movement is towards negative z-axis. When the beam contacts with electrode, pull in voltage is achieved. This paper explores the perforation and meander concept with Fixed -fixed switch, which increases the flexibility, low actuation voltage and switching speed. The various types of perforations provide discrete displacement corresponding to voltage. In this paper we represent the design and simulation of Fixed-Fixed switch using perforation of size 2μm-5μm. The electrostatic actuation mechanism is applied on the Fixed-fixed switch which has a serpentine meanders and perforation at different voltages. The switch is designed and simulated by using COMSOL ® MULTIPHYSICS 4.3b software.

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Stress Analysis Using Finite Element Modeling of a Novel RF Microelectromechanical System Shunt Switch Designed on Quartz Substrate for Low-voltage Applications

Cited by 21 publications

References 14 publications

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Comparative Study of Perforated RF MEMS Switch

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