Strengths and Advantages of Electrodeposition as a Semiconductor Growth Technique for Applications in Macroelectronic Devices

Dharmadasa, I. M.; Haigh, J.

doi:10.1149/1.2128120

Cited by 163 publications

(114 citation statements)

References 20 publications

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“…This variation is mainly due to the change of composition in the absence of external doping agent. This has been reported earlier from our previous work using sulphate and nitrate precursors [11,12,19]. Completely opposite results observed for CdTe layers grown from chloride precursor are therefore due to the "built-in CdCl2 treatment" during the growth.…”

Section: Photoelectrochemical (Pec) Cellsupporting

confidence: 56%

“…Various techniques have been reported for preparation of CdTe thin films such as physical vapour deposition (PVD) [2], RF sputtering [3], spray pyrolysis [4], close-space sublimation (CSS) [5,6] and electrodeposition (ED) [7][8][9][10][11][12]. Electrodeposition is an attractive technique for the preparation of CdTe because of its low-cost, simplicity, scalability, manufacturability and ability to obtain p-, i-or n-type materials by controlling the cathodic voltage during electrodeposition [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…In electrodeposition, the Cd source of CdTe was used to be from CdSO4 precursor [8][9][10][11]. Then, the deposited CdTe layer should undergo CdCl2 treatment to activate the properties of CdTe for a better performance in CdS/CdTe solar cell.…”

Section: Introductionmentioning

confidence: 99%

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Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

et al. 2015

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Cadmium telluride (CdTe) thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2)·H2O and tellurium dioxide (TeO2) using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD), Raman spectroscopy, optical profilometry, DC current-voltage (I-V) measurements, photoelectrochemical (PEC) cell measurement, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE) in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i-and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 10 10884(1.48-1.52) eV reduce to (1.45-1.49) eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

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Section: Photoelectrochemical (Pec) Cellsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

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Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

et al. 2015

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“…19,25 Compared with these approaches, electrodeposition is more attractive [26][27][28][29] in terms of convenience, cost, and suitability for the large-scale production of thin films. Moreover, the surface morphology, composition, and properties of semiconductors can be flexibly controlled by adjusting the operating parameters such as electrodeposition potential or current, potential waveforms (constant potential or pulse potential), concentration of precursors, temperature, and additives.…”

mentioning

confidence: 99%

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Pai

Hsieh

et al. 2015

J. Electrochem. Soc.

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Ionic liquid zinc chloride-1-ethyl-3-methylimidazolium chloride (IL ZnCl 2 -EMICl) with a ZnCl 2 /EMICl ratio of 40/60 mol% was used as the electrolyte to study the voltammetric behavior of Se(IV) introduced into the IL as selenium chloride (SeCl 4 ) or selenium oxide (SeO 2 ). The electrodeposition of ZnSe was performed using constant-potential electrolysis at tungsten electrodes via a two-stage approach from the IL with and without SeO 2 . The nucleation mechanism of Se at the tungsten electrodes agrees better with the three-dimensional instantaneous nucleation than the progressive nucleation based on Sharifker's model. Crystalline Se and approximately stoichiometric crystalline ZnSe electrodeposits could be obtained from this system. The ZnSe films showed photoelectrochemical activity with a bandgap energy of ∼2.5 eV. According to the experiments of the dependence of the photocurrent on the applied potential, the ZnSe film was determined to be a p-type semiconductor with the flatband potential V FB of −0. Zinc selenide (ZnSe) is a II-VI semiconductor that belongs to the chalcogenide family. ZnSe is usually obtained as a n-type semiconductor with a wide bandgap (2.67-2.7 eV). p-type ZnSe, which is very likely due to excess Se in the deposits, has been prepared using electrodeposition.1 ZnSe has been reported to be a useful material for various optoelectronic devices, such as lightemitting devices, window layers for solar cells, photovoltaic cells, laser screens, film transistors, photoelectrochemical cells, and optical components for infrared lasers. 19,25 Compared with these approaches, electrodeposition is more attractive [26][27][28][29] in terms of convenience, cost, and suitability for the large-scale production of thin films. Moreover, the surface morphology, composition, and properties of semiconductors can be flexibly controlled by adjusting the operating parameters such as electrodeposition potential or current, potential waveforms (constant potential or pulse potential), concentration of precursors, temperature, and additives. Therefore, ZnSe has been widely prepared using electrodeposition, with mostly successful results. Most electrodepositions of ZnSe were carried out cathodically in acidic aqueous baths containing Zn(II) and SeO 2 . [30][31][32][33][34][35][36][37] In acidic solutions, SeO 2 dissolves to form H 2 SeO 3 . ZnSe has also been electrodeposited from alkaline aqueous baths. [38][39][40] In alkaline solutions, Zn(II) and SeSO 3 2− are most frequently used as the precursors, and complexing agents, such as EDTA, are usually needed for forming strong complex ions with Zn 2+ to prevent the chemical precipitation of ZnSe, which is produced from the reaction between Zn(II) and SeSO 3 2− . Few studies have electrodeposited ZnSe from nonaqueous baths such as dimethylsulfoxide [41][42][43] and molten salts (CaCl 2 -NaCl at 550• C). 44,45 In almost all recent studies and applications of ZnSe semiconductors, ZnSe has been prepared using electrodeposition from aqueous baths. [46][47][48] 28,29,[50]...

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“…5 Electrochemical methods have been widely applied to metal deposition, but their use for preparation of functional oxide materials is still a growing area of research. [12][13][14] Our thin films were prepared using a method described elsewhere 4 based on a nitrate-reduction reaction using 0.01M Zn͑NO 3 ͒ 2 in ultrapure water ͑pH=5͒. Substrates were polycrystalline Pt, Au/ Cr/glass, or stainless steel ͑316 series͒ and were cleaned in HCl and H 2 SO 4 prior to use.…”

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confidence: 99%

Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

Chatman

Ryan

Poduska

2008

Applied Physics Letters

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Constant-potential electrochemical synthesis of ZnO on metal substrates enables selective formation of either Ohmic or Schottky-barrier contacts. Using a mildly acidic nitrate-based aqueous electrolyte, there is a substrate-dependent deposition potential below which electrodeposited ZnO heterojunctions display Schottky response with high contact resistances (∼105Ω) and above which Ohmic behavior and low contact resistances (∼1Ω) occur. Voltammetric evidence for Zn metal deposition, in conjunction with Schottky-barrier heights that are consistent with values expected for a ZnO–Zn junction, suggests that more negative deposition potentials create a Zn-based interface between the substrate and ZnO that leads to rectifying behavior.

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Strengths and Advantages of Electrodeposition as a Semiconductor Growth Technique for Applications in Macroelectronic Devices

Cited by 163 publications

References 20 publications

Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

Voltammetric Study of Selenium and Two-Stage Electrodeposition of Photoelectrochemically Active Zinc Selenide Semiconductor Films in Ionic Liquid Zinc Chloride-1-Ethyl-3-Methylimidazolium Chloride

Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

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