Strength of bonded interfaces

Vallin, Örjan; Jonsson, Kerstin; Knechtel, Roy

doi:10.1016/b978-0-12-817786-0.00041-4

Cited by 1 publication

(1 citation statement)

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“…Sufficient control can be achieved during the process by means of the bonding current and its characteristic time dependence which indicates whether the bonding process is proceeding as desired. In addition, it is easy to check for unbonded areas right after the process using light-optical methods, and it is even possible to determine the bond strength non-destructively on special test structures [2]. Many, but not all, coating materials commonly used in microsystems technology allow for anodic bonding.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Anodic Bond Formation Process and Potential Use of the Results

Knechtel,

Wenig,

Seyring

et al. 2023

ECS Trans.

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Anodic bonding of glass to silicon wafers is an essential step in microsystems manufacturing, combining reliable process setup with robust process control and providing very strong and hermetic wafer bonds. It is general accepted that the bond formation is based on anodic oxidation processes, but it is still under debate where the oxygen originates from and how far the oxidation can be driven. The oxidation mechanism during anodic bonding has been studied using sequential and one-step bonding procedures. It can be concluded that the oxygen for the oxidation originates from the glass. It is therefore possible to completely oxidise sputtered aluminium between two glass wafers during bonding, resulting in a nearly optically transparent bond of both wafers. By understanding the oxidation processes, it is possible to predict which surface layers will bond well (silicon, silicon dioxide, aluminium) and which will be hardly or impossible to bond (silicon nitride, gold). These predictions have been tested and confirmed by experimental results.

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Section: Introductionmentioning

confidence: 99%