Strength and Transmittance of Sapphire and Strengthened Sapphire

Gentilman, Richard L.; Maguire, E. A.; Starrett, H. S.; Hartnett, T.; Kirchner, H. P.

doi:10.1111/j.1151-2916.1981.tb10327.x

Cited by 34 publications

(13 citation statements)

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“…Sapphire possesses excellent optical and mechanical properties with good corrosion resistance and high hardness, and is widely used in solid lasers, infrared windows, semiconductor chip substrates, precision anti-friction bearings, and other high-tech fields [1][2][3][4][5]. Sapphire is well known as the substrate for gallium and indium nitride films and is used for fabricating light emitting diode devices [6].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

2017

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Abstract:The chemical mechanical polishing (CMP) process has become a widely accepted global planarization technology. The abrasive material is one of the key elements in CMP. In the presented paper, an Ag-doped colloidal SiO 2 abrasive is synthesized by a seed-induced growth method. It is characterized by time-of-flight secondary ion mass spectroscopy and scanning electron microscopy to analyze the composition and morphology. The CMP performance of the Ag-doped colloidal silica abrasives on sapphire substrates is investigated. Experiment results show the material removal rate (MRR) of Ag-doped colloidal silica abrasives is obviously higher than that of pure colloidal silica abrasives under the same testing conditions. The surfaces that are polished by composite colloidal abrasives exhibit lower surface roughness (Ra) than those polished by pure colloidal silica abrasives. Furthermore, the acting mechanism of Ag-doped colloidal SiO 2 composite abrasives in sapphire CMP is analyzed by X-ray photoelectron spectroscopy, and analytical results show that element Ag forms Ag 2 O which acts as a catalyst to promote the chemical effect in CMP and leads to the increasing of MRR.

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Section: Introductionmentioning

confidence: 99%

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

2017

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“…Sapphire is widely used for special windows, domes, substrate and construction material because of its excellent physical and chemical properties, including its high melting point, exceptional hardness, transmission over a wide band of wavelengths and radiation and chemical etching resistance [1][2] . Sapphire is the best and the most economical substrate to deposit a GaN based compound producing blue light in LED devices, because it has the same symmetry with wurtzite GaN [3][4] .…”

Section: Introductionmentioning

confidence: 99%

The Study of Pretreated Sapphire Substrate

Peng

Jin

Dong

et al. 2011

2011 Symposium on Photonics and Optoelectronics (SOPO)

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Sapphire is known as the most commonly used substrate, and it is widely used as the substrate for the growth of GaN films. In this paper, Sapphire substrate is pretreated by melted KOH solution, in which the triangle patterned etched pits are formed, and the interpretation is theoretically given about the triangle shape. In additional, compared the results which are obtained when the etched temperature and time varied. The dislocation is displayed very clearly and accurately, and adapted to the followed lateral epitaxial overgrowth, when the sapphire substrate is pretreated at 280°C for about 60 minutes. The crystal quality is analyzed by high-resolution double crystal X-ray diffraction (DCXRD). The result indicated that the pretreatment of sapphire substrate has less effect on the crystal quality. So the patterned sapphire can serve as lateral epitaxial substrate to decrease the dislocation density of GaN films. High quality GaN films with low dislocation density have been grown by LP-MOCVD on the sapphire substrate which is pretreated by a new and simple method in order to overcome those problems existing in the conventional ELO technique.

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“…Sapphire wafer is the most common used substrate material for fabricating light emitting diodes (LEDs) devices [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Shi

Pan

Liu

2014

Proceedings of International Conference on Planarization/CMP Technology 2014

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In this paper, an innovative study is presented to characterize the chemical-mechanical planarization (CMP) performance on hexagonal sapphire (0001) wafer surface by using colloidal silica (SiO2) abrasives based slurry with two different particle sizes, which indicates that the value of abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The nano SiO2 abrasives used in this study could perfectly optimize the quality of surface roughness. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of sapphire wafer.

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Strength and Transmittance of Sapphire and Strengthened Sapphire

Cited by 34 publications

References 1 publication

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

The Study of Pretreated Sapphire Substrate

Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

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