“…Although the thickness of layers plays a vital role in the device in terms of homogeneity of the layers, cell efficiency seems insensitive to the thickness of the buffer and window layers. After optimizing the buffer and window layer parameters, when the absorber layer is optimized with selected parameters ( N V , N C , RRC, electron and hole mobility of 2.2 × 10 15 cm −3 , 1.8 × 10 16 cm −3 , 1 × 10 −6 , 1000 cm 2 s −1 V −1 and 100 cm 2 s −1 V −1 , respectively) given in the previous report 44 (with 50 nm thickness for the SnSe 2 and SnO 2 layers), the efficiency of the cell reaches up to 20.28% (Fig. S7, ESI†).…”