2017
DOI: 10.1088/1742-6596/902/1/012021
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Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images

Abstract: Abstract. Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum dot materials. In this work, GPA has been applied to high resolution Z-contrast scanning transmission electron microscopy (STEM) images. Strain maps determined from different g vectors of these images are compared to each other, in order to analyze and assess the GPA technique in ter… Show more

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“…On the one hand, data cleaning or denoising is of vital importance to pursue reproducible and statistically meaningful quantitative analysis on STEM data. [1][2][3][4][5][6][7][8][9][10] Therefore, using ML, which was already shining in denoising in other scientific and technical fields was the natural decision. Here, the unsupervised approaches were the first approximations that succeeded in this direction.…”
Section: Electron Microscopy Advances With Machine Learningmentioning
confidence: 99%
“…On the one hand, data cleaning or denoising is of vital importance to pursue reproducible and statistically meaningful quantitative analysis on STEM data. [1][2][3][4][5][6][7][8][9][10] Therefore, using ML, which was already shining in denoising in other scientific and technical fields was the natural decision. Here, the unsupervised approaches were the first approximations that succeeded in this direction.…”
Section: Electron Microscopy Advances With Machine Learningmentioning
confidence: 99%