2023
DOI: 10.1039/d3ta04634f
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Strategy for enhancement of magnesium ion diffusion in a vanadium tetra sulfide-layered structure for rechargeable magnesium batteries

Muhammad Kashif Naseem,
Mian Azmat,
Changliang Du
et al.

Abstract: Theoretically Higher volumetric capacity, natural abundance, lower cost, dendrite free and ecofriendly Rechargeable Magnesium Battery System (RMBS) is considered as the most promising candidate for future commercialization. However, lower capabilities...

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Cited by 3 publications
(4 citation statements)
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“…The participation of V-3d and S-3p states in the valence and conduction band is in agreement with the literature; 43 however, a sharp band due to Co-3d states appeared below the conduction band. The 0.91 eV band gap of VS 4 , consistent with the literature, 44,45 widens and becomes 0.97 eV on Co incorporation. The DOS plots exhibit that VS 4 cathode electronic performance is not affected except for band gap widening.…”
Section: Resultssupporting
confidence: 90%
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“…The participation of V-3d and S-3p states in the valence and conduction band is in agreement with the literature; 43 however, a sharp band due to Co-3d states appeared below the conduction band. The 0.91 eV band gap of VS 4 , consistent with the literature, 44,45 widens and becomes 0.97 eV on Co incorporation. The DOS plots exhibit that VS 4 cathode electronic performance is not affected except for band gap widening.…”
Section: Resultssupporting
confidence: 90%
“…Jankowski and Lastra explained that V–S bonds break at higher concentration of Mg ions and form a cluster of Mg–S inside the cathode, which results in capacity decreases and overall reduced performances of RMBS . A similar performance of reduced behavior of VS 4 was experimentally observed in our previous work . A stable long cyclic performance was reported due to tungsten (W)-doped VS 4 . , The enhanced performance along with expanded layers and sulfur vacancies was attributed to multielectron participation.…”
Section: Introductionsupporting
confidence: 75%
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“…All density functional theory (DFT) calculations were performed in the Vienna Ab Initio Simulation Package (VASP) to explore the structural, electronic, and optical properties of pristine and Sm-doped VO 2 . The all-electron projector augmented wave (PAW) was employed for core electrons, and generalized gradient approximation (GGA) with the Perdew–Burke–Ernzerhof (PBE) exchange-correlation functional was employed to deal with valence electrons. Hubbard U correction was adopted to accurately predict the relative stability, electron properties, and bandgap of VO 2 . , The U eff values of 3.4 eV for V-3 d and 9.5 eV for Sm-4 f were applied to treat on-site coulomb repulsion among electrons of partially filled orbitals. Regarding the experimental doping concentration, VO 2 (M 1 ) supercell structures of 2 × 2 × 3, 2 × 2 × 2, and 2 × 2 × 1 primitive unit cells were simulated to get 2.08, 3.12, and 6.25% Sm doping concentrations, respectively, by replacing one V atom with a Sm dopant in each supercell configuration.…”
Section: Methodsmentioning
confidence: 99%