Strategies to Reduce Transient Liquid Phase Bonding Time for the Die Attach of Power Semiconductors

Abstract

High voltage operation High T°a pplications High frequency switching Electron velocity (x107 cm/s) Melting point (x1000 ℃) Thermal conductivity (W/cm, ℃) Energy gap(eV) Electric field (Mv/cm

Recent Progress in Transient Liquid Phase and Wire Bonding Technologies for Power Electronics

“…Sohn et al [64] investigated the behavior of the liquid layer in TLP bonding with time. They calculated the width of the liquid transient layer after the isothermal solidification and proposed the bonding mechanism.…”

“…Most of the research activities are devoted to the use of various melting point reducing agents in the liquid metal for the isothermal solidification in TLP bonding [67]. Most widely used meting point depressants are pure C, B, or phosphorus as an interstitial element to reduce the isothermal solidification time [35,64,68]. Notable reduction in TLP bonding time has been obtained, to yield a very short 10 to 15 min, which covers the entire isothermal solidification and composition homogenization duration [35,[52][53][54][55][56][57][58][59][60][61][62][63][64].…”