Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Otnes, Gaute; Heurlin, Magnus; Graczyk, Mariusz; Wallentin, Jesper; Jacobsson, Daniel; Berg, Alexis; Maximov, Ivan; Borgström, Magnus T.

doi:10.1007/s12274-016-1165-z

Cited by 58 publications

(77 citation statements)

References 43 publications

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“…[70] We have not noticed any obvious migration of Au in our videos, but it is in principle possible at high temperatures. [71] In some experiments (not discussed in this article) we observed tiny portions of the catalyst left on the sidewalls of the nanowire, which we do not know if it was pure Au or pure Ga or a Au-Ga mixture. Since the As concentration is very small, its contribution to the volume can be neglected.…”

Section: S6 Ga From Xeds and Volume Changementioning

confidence: 82%

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

et al. 2019

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Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct measurement of the catalyst composition of individual gold seeded GaAs nanowires inside an electron microscope as they grow. The Ga content in the catalyst during growth increased with both temperature and Ga precursor flux. A direct comparison of the calculated phase diagrams of the Au-Ga-As ternary system to the measured catalyst composition not only lets us estimate the As content in the catalyst but also indicates the relevance of phase diagrams to understanding nanowire growth.

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Section: S6 Ga From Xeds and Volume Changementioning

confidence: 82%

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

et al. 2019

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“…In addition, growth rate variations from NW to NW across the sample can be detrimental when fabricating heterostructured NWs since achieving reproducible/homogenous thicknesses of the shell/core and segments within the NWs becomes problematic. The extra level of control reached when being able to also pre-define the position the NWs, and at the same time control both the total and the local density for every NW across the sample, is made possible only when employing a lithography technique [17,27,28].…”

Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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“…Apart from the SA‐MOVPE method, there are additional methods for fabricating periodic nanowires arrays with the bottom‐up approach. Nanoimprint lithography (NIL) can successfully be used to pattern (111) B InP substrates with Au particles, yielding periodic arrays of InP nanowires . NIL has the advantage over EBL of being a cheaper way of patterning large areas with higher throughput once the imprint mold is fabricated.…”

Section: Challenges In Nanowire Growthmentioning

confidence: 99%

Engineering III–V Semiconductor Nanowires for Device Applications

Wong‐Leung

Yang

et al. 2019

Advanced Materials

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of silicon along the direction. Hiruma et al. [4] demonstrated that GaAs NWs-then termed whisker growth can be grown by metal-organic chemical vapor deposition (MOCVD) with a similar VLS mechanism. A spate of papers from the same group clearly identified that this process could be extended to InAs NWs and the group was successful in growing a GaAs p-n junction (see ref.[5] for a review). This concept was further expanded in NW heterostructures by Samuelson and co-workers in Lund. [6] This whole sequence of research findings triggered the growing new research field of semiconductor NWs which peaked in 2009 with a vast number of publications. Figure 1 is a plot of the number of publications published per year in the field of "semiconductor nanowires" for over two decades from Clarivate Analytics. Since 2009, the number of publications within this field is about 1000 per year. Herein, we review our recent NW work and expand on our future directions within this field. III-V semiconductor nanowires offer potential new device applicationsbecause of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.

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Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Cited by 58 publications

References 43 publications

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Engineering III–V Semiconductor Nanowires for Device Applications

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