Strategies to increase the modal gain in heterogeneously integrated III–V amplifiers on silicon-on-insulator

Abstract

Abstract:A novel waveguide shape is proposed to take advantage of the high index contrast in adhesively bonded III-V on Silicon-On-Insulator (SOI) waveguides for application in onchip semiconductor optical amplifiers. By decreasing the effective index of the top contact layer, the confinement in the active region can be increased by 70%, boosting the achievable modal gain and reducing the required device length to achieve a certain gain. This technique could reduce the footprint of amplifiers, lasers and other active devices integrated on the SOI platform. Powered by Editorial Manager® and Preprint Manager® from Aries Systems CorporationOptical and Quantum Electronics manuscript No.(will be inserted by the editor)Strategies to increase the modal gain in heterogeneously integrated III-V amplifiers on Silicon-On-InsulatorReceived: date / Accepted: date Abstract A novel waveguide shape is proposed to take advantage of the high index contrast in adhesively bonded III-V on Silicon-On-Insulator (SOI) waveguides for application in on-chip semiconductor optical amplifiers. By decreasing the effective index of the top contact layer, the confinement in the active region can be increased by 70 %, boosting the achievable modal gain and reducing the required device length to achieve a certain gain. This technique could reduce the footprint of amplifiers, lasers and other active devices integrated on the SOI platform.

Photonic subsystems for optical packet/burst switches based on heterogeneous SOI and III-V integration

“…As shown in Fig. 3a,b these switches consist of a thin InP membrane containing 3 InGaAsP quantum wells bonded on an SOI platform [10][9] [8]. In the off condition this device is highly absorbing in the wavelength range 1530nm-1570nm.…”

Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

“…The main challenge then is to make this stack compatible with electrical injection without introducing excessive losses through the top metal contact. In [112] an approach involving microstructuring of the upper InP-cladding t = 220 nm t = 400 nm t = 500 nm was proposed to resolve this. However, this has yet to be demonstrated.…”

Optically Reconfigurable 1×4 Silicon-on-Insulator Remote Node Switch for Access Networks

“…In [10] the measured absorption was fitted to extract the quantum well response as a function of carrier density. However, because of an anticipated reduced heating of the device, this data is not valid anymore, and is therefore replaced by a numerically simulated quantum well response at 300 K, using the method as described in [21].…”