Owing to the polycrystalline nature of hybrid perovskite
thin films,
the trap states in grain boundaries (GBs) introduced by charged defects
play an important role in determining the charge collection efficiency
and have a significant impact on their optoelectronic properties.
Herein, we show the direct imaging of the GB passivation of perovskite
films through an anti-solvent treatment and the anomalous charge distribution
across the films due to the passivation. The downward band bending
at the GBs has been observed at nanometer scale using Kelvin probe
force microscopy. This revealed that a hot chlorobenzene treatment
decreases the band bending at GBs and allows more homogeneous electronic
properties throughout the film after passivation. Conductive atomic
force microscopy has been employed to show the charge transport mapping
across the films. It was found that the passivation effect not only
changes the surface potential at GBs but also enhances the overall
charge collection efficiency of the film. Our work provides a solution
to reduce the density of charge defects at GBs through hot anti-solvent
treatment, which is demonstrated to be a promising strategy to decrease
the recombination losses at GBs and, thereby, increase the electronic
quality of the perovskite films as well as enhance the device performance.