2000
DOI: 10.1143/jjap.39.l1245
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Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

Abstract: Coherently strained InAs quantum dots (QDs) with narrow inhomogeneous broadening were grown by molecular beam epitaxy (MBE) using the Stranski-Krastanov (SK) growth mode. The increase in the InAs dot size and decrease in the dot density were induced by surface migration enhancement due to the low arsenic pressure below 6×10-7 Torr. In addition, the low arsenic pressure and the low growth rate produced the self size-limiting effect, which was attributed to the inhibition of indium incorporation. As a result, th… Show more

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Cited by 173 publications
(116 citation statements)
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“…Unlike the common Stranski-Krastanov growth of QDs, which mainly relies on the strain effect between the deposited material and the substrate [11], in this case the growth of the InSb QDs is based on the As-to-Sb anion exchange reaction, which is achieved by exposing the substrate to Sb2 flux for a very short time interval. The substrate temperature during dot formation can be adjusted in the interval 320-450 °C , resulting in InSb layers of thickness in the range 0.5-0.9 monolayer (ML).…”
Section: Methodsmentioning
confidence: 99%
“…Unlike the common Stranski-Krastanov growth of QDs, which mainly relies on the strain effect between the deposited material and the substrate [11], in this case the growth of the InSb QDs is based on the As-to-Sb anion exchange reaction, which is achieved by exposing the substrate to Sb2 flux for a very short time interval. The substrate temperature during dot formation can be adjusted in the interval 320-450 °C , resulting in InSb layers of thickness in the range 0.5-0.9 monolayer (ML).…”
Section: Methodsmentioning
confidence: 99%
“…The threshold current density for each QD layer of our proposed QD laser was 18.2 A/cm 2 /layer. Moreover, the threshold current density for each QD in our proposed QD laser exhibited a lower value of 2.7 × 10 In this study, we fabricated high-performance QDs with a high density of 1×10 11 cm −2 and a narrow PL FWHM of 22.3 meV using As 2 , a graded strain-reducing layer, and a molecular beam at 1.3 μm. We determined optical properties of the active layer composed of high-density and highuniformity QDs.…”
Section: Figmentioning
confidence: 95%
“…Although the size of islands is known to be limited automatically in S-K mode, the effect occurs only in large islands of which diameter is about 30 nm or longer. 22 The effect should not be notable in nucleation because a critical cluster consists only of a few atoms, as discussed later. The adatom density may increase because adatoms cannot attach to large islands due to the self-size-limiting effect; the island density is generally a function of adatom density.…”
Section: B Applicability Of the Model To S-k Modementioning
confidence: 99%