Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping

Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics

“…The easiest way is to schedule the implantation before the SiGe growth step. Depending on the used ion gas and the implantation conditions [6,9,16], various types of bubbles, connected with different interfacial dislocations, were observed [17]. The interactions between bubbles and dislocations require the bubble layer to be separated from the interfacial region [18,19].…”

Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates

“…When the Ge content was less than 50%, the strain and composition in SGOI were simultaneously evaluated using the peak positions of the Si-Si, Ge-Ge, and Si-Ge phonon modes (x) in SiGe. 21,22 They are given by…”

Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells

“…It was based on the concern of preserving the SiGe pseudo-substrates from the possible implantation damage. However, the easiest way was to schedule the implantation before the SiGe growth step, after some upstream trials with different noble gas and implantation conditions [21][22][23][24]. Depending on the latter, various types of He bubbles connected with different dislocation reactions were observed [25].…”