2005
DOI: 10.1117/12.600035
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Strained-silicon metrology using a multi-technology optical system

Abstract: A selection of thin Si layers grown epitaxially upon thick relaxed SiGe films were measured using the combination of optical metrology techniques available on the Opti-Probe ® 7341 system. The techniques used included in particular (i) angle resolved laser Beam Profile Reflectometry ® (BPR ® ) with S and P polarization, (ii) Broad-band visible-DUV spectrophotometry (BB), and (iii) spectroscopic ellipsometry (SE). The measured parameters included the Ge-content of the relaxed SiGe layer, the thickness and optic… Show more

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