Strained InGaAs/GaAs Quantum-Well Laser Emitting at 1054 nm

Li, X.; Duan, L. H.; Zhou, Y.; Liu, A. P.; Wei, Zhi-Yuan

doi:10.1007/s10948-010-0741-9

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…It has an obstacle to realize 1053 nm, highly reliable single-mode operation due to the high mechanical strain in InGaAs QW layer on GaAs; a 6 nm thick strained buffer layer was grown to improve the surface quality [25,26]. The QW was grown at a temperature of 100 • C lower than the growth temperature of the cladding layers.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

Duan

Fang

Zhang³

et al. 2014

Semicond. Sci. Technol.

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A high speed 1053 nm superluminescent diode (SLD) with a ridge-waveguide structure has been fabricated for the first time to the best of our knowledge. InGaAs/GaAs quantum well epitaxial structure, the etched depth of the insulation channel and the area of p-side electrode were optimized to enhance the modulation bandwidth of the SLD. Bend-waveguide unpumped absorbing region structure and facet coating methods have been adopted to suppress the lasing oscillation. As a result, a −3 dB cutoff frequency of 1.7 GHz is obtained at a dc bias current of 100 mA and 25 • C heat-sink temperature, corresponding to 2.5 mW output power from single-mode fiber with spectral modulation of less than 0.15 dB and spectral width of 24 nm. The SLD module shows a good reliability.

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Section: Device Structure and Fabricationmentioning

confidence: 99%