Strained and Piezoelectric Characteristics of Nitride Quantum Dots

Yan-Wu, Lü; Lin, Cai Peng; Liang, Shuang

doi:10.1088/0256-307x/23/4/054

Chinese Phys. Lett.

2006

DOI: 10.1088/0256-307x/23/4/054

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Strained and Piezoelectric Characteristics of Nitride Quantum Dots

Lü Yan-Wu¹,

Cai Peng Lin²,

Shuang Liang³

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Cited by 2 publications

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Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects

Chi¹,

Shi²

2006

Chinese Phys. Lett.

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Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.

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Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects

Chi¹,

Shi²

2006

Chinese Phys. Lett.

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Self-Trapping of Acoustic Polaron in One Dimension

Jun-Hua¹,

Liang²

2007

Chinese Phys. Lett.

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Strained and Piezoelectric Characteristics of Nitride Quantum Dots

Cited by 2 publications

References 11 publications

Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects

Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects

Self-Trapping of Acoustic Polaron in One Dimension

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