Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Chi, Hang; Ou, Yunbo; Eldred, Tim B.; Gao, Wenpei; Kwon, Sohee; Murray, Joseph A.; Dreyer, Michael; Butera, R. E.; Ambaye, Haile; Keum, Jong K.; Greenberg, Alice T.; Liu, Yuhang; Neupane, Mahesh R.; Coster, George J. de; Vail, Owen; Taylor, Patrick J.; Folkes, P. A.; Rong, Charles; Yin, Gen; Lake, Roger K.; Lauter, Valeria; Heiman, D.; Moodera, Jagadeesh S.

doi:10.48550/arxiv.2207.02318

Cited by 2 publications

(2 citation statements)

References 44 publications

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“…11(a), the anomalous Hall resistivity is extracted for the two samples on sapphire as a function of temperature. We observe in both cases a sign change of the anomalous Hall resistivity below the Curie temperature of 180 K. Similar observations were reported in [44,45]. The possible origin of this effect is discussed in the following as a consequence of the energy-dependent Berry phase of Cr 2 Te 3 .…”

Section: Magnetotransportsupporting

confidence: 88%

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Guillet,

Vojacek,

Dosenovic

et al. 2023

Preprint

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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.

show abstract

Section: Magnetotransportsupporting

confidence: 88%

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Guillet,

Vojacek,

Dosenovic

et al. 2023

Preprint

View full text Add to dashboard Cite

show abstract

“…11(a), the anomalous Hall resistivity is extracted for the two samples on sapphire as a function of temperature. We observe in both cases a sign change of the anomalous Hall (AH) resistivity below the Curie temperature of 180 K. Similar observations were reported in [51,52]. The possible origin of this effect is discussed in the following as a consequence of the energy-dependent Berry phase of Cr 2 Te 3 .…”

Section: Magnetotransportsupporting

confidence: 86%

Epitaxial van der Waals heterostructures of Cr2Te3 on two-dimensional materials

Guillet

Vojacek

Dosenovic

et al. 2023

Phys. Rev. Materials

View full text Add to dashboard Cite

Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature T C and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultracompact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr 2 Te 3 appears to be a promising candidate. Bulk Cr 2 Te 3 exhibits strong PMA and a T C of 180 K. Moreover, both PMA and T C might be adjusted in ultrathin films by engineering composition or strain or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasifreestanding Cr 2 Te 3 on three classes of 2D materials: graphene (semimetal), WSe 2 (semiconductor), and Bi 2 Te 3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single-crystalline character of Cr 2 Te 3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and T C close to the bulk Cr 2 Te 3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr 2 Te 3 /2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling, and sharp vdW interface.

show abstract

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Cited by 2 publications

References 44 publications

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Epitaxial van der Waals heterostructures of Cr2Te3 on two-dimensional materials

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