Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

Klein, C.; Vyshnepolsky, Michael; Kompch, A.; Klasing, F.; Hanisch-Blicharski, Anja; Winterer, Markus; Hoegen, M. Horn‐von

doi:10.1016/j.tsf.2014.04.024

Cited by 10 publications

(8 citation statements)

References 42 publications

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“…3,23 Other TI films, such as Bi 2 Se 3 , show a similar type of growth. [24][25][26][27] What is also interesting, is the shape of the observed pyramids suggesting a spiral-like growth, which is clearly visible in the 3D image shown in Fig. 2d.…”

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confidence: 69%

Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

et al. 2015

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The relation between surface morphology and local conductance was studied for single crystalline thin films of Bi2Te3 grown on mica. Atomic force microscopy and electron diffraction revealed the hexagonal order of the surface with quintuple layer steps and spiral islands. Furthermore, the experiments using contact mode AFM with conducting tip performed at room temperature revealed the high conductance of the surface, which was locally reduced due to changes in the local electronic structure at the defects (e.g. edges of the terraces). Contact current-voltage characteristics tested over the surface showed a linear behavior in every point, with the resistance significantly lower than the resistance of reference metallic samples (gold, platinum). We show that local conductivity AFM is a good technique to exploit the peculiar surface properties of topological insulators.

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confidence: 69%

Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

et al. 2015

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“…Because of the hexagonal surface symmetry and high crystalline quality of Si(111), it is suggested to be a suitable substrate for epitaxial growth of various V 2 –VI 3 films (Bi 2 Te 3 , Sb 2 Te 3 , Bi 2 Se 3 , etc. ). − Many research studies on the TI behavior of V 2 –VI 3 on Te-terminated or H-terminated Si(111) substrates show that the saturation of Si(111) is crucial to their van der Waals (vdW) growth mode. ,− Typical resultant two-dimensional (2D) V 2 –VI 3 crystals are hexagonal or triangular in shape . While the covalent surface of Si(111) is terminated by atom absorption, the surface dangling bonds are saturated, and possible chemical reactions are suppressed.…”

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confidence: 99%

Bi₂Te₃ Nanoplates’ Selective Growth Morphology on Different Interfaces for Enhancing Thermoelectric Properties

Wang

et al. 2019

Crystal Growth & Design

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Bi2Te3, a typical thermoelectric (TE) material as well as topological insulator, exhibits anisotropy characteristics due to its layered structure. (00l)-oriented Bi2Te3 reported with good TE properties in the ab-plane is not the best choice for “π”-type nanomicro TE devices. Bi2Te3 nanoplates’ growth behavior as well as their corresponding TE properties were modulated on different substrates (Si(111), H-terminated Si(111), and glass) by molecular beam epitaxy in this paper. The interfaces between Bi2Te3 and substrate play an important role in Bi2Te3 nanoplates’ morphology, along with the related TE properties. The intersected nanoplates, which possess higher density grain boundaries compared with the stacked ones, filter the low-energy carriers and enhance phonon scattering. Thus, an increased Seebeck coefficient and predictable reduction of thermal conductivity were achieved by using intersected nanoplates. Moreover, the ratio of intersected/stacked Bi2Te3 nanoplates as well as their size can be properly controlled by modulating the substrates’ surface and seed layer which can be same applied to other layered materials. This study is conducive to realizing the integration of two-dimensional layered materials in micro-/nanodevices by controlling the specific growth behavior and properties.

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“…11 Nevertheless, the TSS or E F of TIs has not been easily controlled by strain because strains that are usually generated by lattice mismatch at the interface of a film and substrate or grain boundaries are still irreversible. 11,12 Sb 2 Te 3 is known as a p-type 3D TI material, having a rhombohedral structure consisting of covalently bonded −Te− Sb−Te−Sb−Te− quintuple layers (QLs). 13 Because QLs have weak bonding (van der Waals) between each layer, the bulk band topology of Sb 2 Te 3 would be expected to be sensitive to uniaxial in-plane stain.…”

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Reversible Fermi Level Tuning of a Sb₂Te₃ Topological Insulator by Structural Deformation

et al. 2015

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For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

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Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

Cited by 10 publications

References 42 publications

Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

Bi₂Te₃ Nanoplates’ Selective Growth Morphology on Different Interfaces for Enhancing Thermoelectric Properties

Reversible Fermi Level Tuning of a Sb₂Te₃ Topological Insulator by Structural Deformation

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Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)

Cited by 10 publications

References 42 publications

Morphology and local conductance of single crystalline Bi2Te3 thin films on mica

Morphology and local conductance of single crystalline Bi2Te3 thin films on mica

Bi2Te3 Nanoplates’ Selective Growth Morphology on Different Interfaces for Enhancing Thermoelectric Properties

Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

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Product

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Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

Morphology and local conductance of single crystalline Bi₂Te₃ thin films on mica

Bi₂Te₃ Nanoplates’ Selective Growth Morphology on Different Interfaces for Enhancing Thermoelectric Properties

Reversible Fermi Level Tuning of a Sb₂Te₃ Topological Insulator by Structural Deformation