Strain relief by long line defects in tensile GaxIn1−xP layers grown on InP substrates

Abstract

Fully strained layers of GaInP on InP significantly thicker than the theoretical critical thickness were grown by metalorganic molecular beam epitaxy. The excess strain energy of these layers is most probably accommodated by long line defects observed by atomic force microscopy. The thickness at which the long line defects appear is about four times the Matthews and Blakeslee critical thickness [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)]. Partial relaxation is measured by x-ray at about 14 times the theoretical critical thickness.

Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature

“…With the exception of In 0.50 Ga 0.50 P, all In x Ga 1Àx P layers were lattice mismatched with the GaAs substrate. Given the layer thicknesses exceeded the critical layer thicknesses reported by Kahn and Ritter, 28 misfit dislocations were generated within the epitaxial layer during the deposition. The influence of this disorder on the amorphization kinetics of In x Ga 1Àx P was, however, considered insignificant based on the study of the closely related In x Ga 1Àx As/InP material system by Hussain et al 11 Samples were implanted at 15 and 300 K with 60 keV 74…”