Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

Rodrı́guez, A.; Rodrı́guez, T.; Kling, A.; Silva, M. F. da; Ballesteros, C.

doi:10.1007/s11664-999-0222-8

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…The magnitude of the thermal strain cannot be evaluated, because the thermal expansion coefficient of a-MnSe is unknown at present. In addition, the strain relaxation caused by the gliding of the stacking faults and the formation of the misfit dislocations has been reported in the sample grown/annealed at high temperature [12][13][14]. To investigate the effects of thermal processing for the a-MnSe epilayers, some asgrown samples were annealed at high temperature (660-800 1C) in a nitrogen atmosphere for 300 s in a rapid thermal annealing system.…”

Section: Article In Pressmentioning

confidence: 99%

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

Kim

Eom

et al. 2005

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 99%

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

Kim

Eom

et al. 2005

Journal of Crystal Growth

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Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy

Adoram

Krapf

Levy

et al. 2000

Physica E: Low-dimensional Systems and Nanostructures

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Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells

Adoram

Krapf

Shappir

et al. 1999

Applied Physics Letters

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Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using infrared-polarization-resolved absorption spectroscopy. The samples were annealed from room temperature up to 1060°C and intersubband transitions between the lowest heavy-hole states and inter-valence-band transitions between heavy-hole and spin-split-off hole states were utilized to probe thermal activation processes. The strain relaxation process is activated at temperatures above 750°C and causes a decrease of the intersubband absorption and an increase of the inter-valence-band absorption. At temperatures above 940°C, we found that a second process of Si/Ge interdiffusion causes a reduction of all absorption lines in the spectrum. We proposed a simple model that provides a qualitative explanation to the above results.

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Strain relaxation mechanisms in Si1−xGex layers grown by solid-phase epitaxy: Influence of the layer composition and growth temperature

Cited by 3 publications

References 12 publications

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy

Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy

Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells

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