Strain relaxation induced transverse resistivity anomalies in SrRuO3 thin films

Separated transport relaxation scales and interband scattering in SrRuO$_3$, CaRuO$_3$, and Sr$_2$RuO$_4$ thin films

“…This growth regime minimizes ruthenium vacancies in the films. Ruthenium vacancies in SrRuO 3 films can be detected in Raman measurements and produce signatures in transport that look like the topological Hall effect, but are not 24,25 . In contrast, samples with minimized ruthenium vacancies exhibit a high residual resistivity ratio (RRR), ρ(300K)/ρ(4K), of ∼ 70 in transport measurements, including the sample studied in this work 23 .…”

Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures

“…Manipulation of the magnetic properties of the thin film resulting in a spatial variation of the magnetic and electronic structure could be another possible explanation. In a single SRO film this was realised through partial relaxation [22]. Originating from such magnetic inhomogeneities both the shape of ρ AHE and the measured value of ∆ρ Hall displays a negligible field-angle dependence.…”

“…By contrast, other groups related the anomalies in the Hall signal not to a topological contribution. Instead, they considered anomalous Hall resistance due to different magnetic domains in SRO [21][22][23], the variation of the magnetic and electronic properties between individual SRO layers [24], thickness inhomogeneities in the SRO layers [25] or defect-induced anomalies [26]. From tight-binding calculations Groenendijk et al [27] arranged the electronic structure of SRO in groups of 3 bands, with 2 low-lying non-trivial bands with Chern number C = ±2.…”

Tunable Two‐Channel Magnetotransport in SrRuO3 Ultrathin Films Achieved by Controlling the Kinetics of Heterostructure Deposition

“…However, the high sensitivity of SRO to external parameters has also given rise to significant concerns about inhomogeneity‐induced artifacts in the AHEs. [ 27–36 ] If significant inhomogeneities are present, spatial regions that are magnetized differently contribute to the AHE signal. Particularly, if two types of region with opposite AHE signs are present, the field‐dependent Hall signal can mimic the “hump anomaly,” similar to that of the topological Hall effect (THE).…”

“…Particularly, if two types of region with opposite AHE signs are present, the field‐dependent Hall signal can mimic the “hump anomaly,” similar to that of the topological Hall effect (THE). [ 12,13,37,38 ] Such a two‐channel AHE can be induced by inhomogeneous film thickness, [ 30,31 ] structural variation, [ 32 ] Ru vacancies, [ 33 ] and interfacial effects. [ 34,35 ] More recently, the ion irradiation has been used for post‐synthesis control of AHE.…”