Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

Abstract

Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface.

HfO2 and Hf1–xSixO2 Thin Films Grown by Metal‐Organic CVD Using Tetrakis(diethylamido)hafnium

“…[1][2][3][4][5] Because of its high stability against thermal treatment, HfO 2 and its silicate are considered to be promising materials for next-generation devices. [6][7][8][9][10] Therefore, HfO 2 CVD technologies have been developed. The properties of some Hf-containing molecules (potential Hf precursors) are listed in Table 1.…”

Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling

“…This approach has been used to characterize the strain in nitride semiconductors [17][18][19] and can reach nm depth resolution if applying high resolution RBS. 20 Figure 3(a) shows the random and [001]-aligned RBS spectra of the sample. The arrows labeled Ga and As indicate the energies of He ions backscattered from Ga and As atoms, respectively, at the surface.…”

Recent Developments in the X-ray Reflectivity Analysis

“…XRR is generally less sensitive to the interface roughness σ i compared with the surface roughness σ s . AFM is widely used to measure the surface structures, and HRBS is widely used to measure the interface structures [42]. Although HRBS cannot directly measure the interface roughness it can measure the film thickness and its dispersion σ t .…”