Strain near SiO2–Si interface revealed by X-ray diffraction intensity enhancement

Emoto, Takashi; Akimoto, Koichi; Ishikawa, Yusuke; Ichimiya, Ayahiko; Tanikawa, A.

doi:10.1016/s0040-6090(00)00879-8

Cited by 15 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The crystallite size of Si in the 500°C annealed samples is estimated as 18 nm by eliminating the effect of the SnO 2 phase. To gain further insight, the lattice strain c is calculated from the equation [13] c…”

Section: Resultsmentioning

confidence: 99%

Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

View full text Add to dashboard Cite

The growth and optical properties of nanocomposite thin films comprising of nanocrystalline Sn and Si are reported. The nanocomposite films are produced by thermal annealing of bilayers of Sn and Si deposited on borosilicate glass substrates at various temperatures from 300 to 500°C for 1 h in air. X-ray diffraction reveals that the as-deposited bilayers consist of nanocrystalline Sn films with a crystallite size of 30 nm, while the Si thin films are amorphous. There is onset of crystallinity in Si on annealing to 300°C with the appearance of the (111) peak of the diamond cubic structure. The crystallite size of Si increases from 5 to 18 nm, whereas the Sn crystallite size decreases with increase in annealing temperature. Significantly, there is no evidence for any Sn-Si compound, and therefore it is concluded that the films are nanocomposites of Sn and Si. Measured spectral transmittance curves show that the films have high optical absorption in the as-deposited form which decreases on annealing to 300°C. The films show almost 80 % transmission in the visible-near infrared region when the annealing temperature is increased to 500°C. There is concomitant decrease in refractive index from 4.0, at 1750 nm, for the as-deposited film, to 1.88 for the film annealed at 500°C. The optical band gap of the films increases on annealing (from 1.8 to *2.9 eV at 500°C). The Sn-Si nanocomposites have high refractive index, large band gap, and low optical absorption, and can therefore be used in many optical applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Growth and optical properties of Sn–Si nanocomposite thin films

Mohiddon

Krishna

2012

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…4.15b). This behaviour points to higher amount of defects due to stress at the Si(111)/SiO 2 interface than for the Si(100)/SiO 2 and Si(311)/SiO 2 interfaces, which can be expected due to better Si-O-Si bond angle alignment at the interface for (100) and (311) orientation of Si as compared to the Si(111) [47][48][49][50][51]. Even during oxidation, is higher when current oscillations at +8 V occur at the Si(100) surface.…”

Section: Oxidation/hydrogenation Cyclesmentioning

confidence: 81%

Electrochemical Passivation and Modification of c-Si surfaces

Rappich

2012

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

View full text Add to dashboard Cite

“…ImageJ [27] is used to analyze the data. Surface sensitive asymmetric X-ray diffraction experiments were carried out in atmosphere at room temperature at beam line BL -15C at the Photon Factory of High Energy Accelerator Research Organization in Tsukuba, Japan [9]. For the observation of strain field near the substrate surface, the rocking curves of the (113) reflection of the substrate were measured.…”

Section: Methodsmentioning

confidence: 99%

“…The rocking curve measurements have been carried out in grazing incidence geometry so as to make the method surface-sensitive. Using this technique, known as asymmetric Bragg-rocking curves, one can quantitatively determine the strain by measuring the bulk reflection under the grazing conditions [8,9,10,11]. T. Emoto et al, determined the strain due to nickel diffusion into hydrogen-terminated Si(111) surface using this method [10].…”

Section: Introductionmentioning

confidence: 99%

MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

Ghatak

Satpati

Umananda

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

View full text Add to dashboard Cite

Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface treatments using thermal evaporation in high vacuum conditions. Irradiation has been carried out with 1.5 MeV Au 2+ ions at various fluences and impact angles. Selected area electron diffraction (SAED) and lattice imaging (using TEM) has been used to determine the strain at surface and interfaces. Preliminary results on the use of surfacesensitive asymmetric x-ray Bragg reflection method have been discussed. The TEM results directly indicate a contraction in the silicon lattice due to ion-induced effects. The nanoislands have shadowed the ion beam resulting in lesser strain beneath the island structures in silicon substrates. High-resolution lattice imaging has also been used to determine the strain in around amorphization zones caused by the ion irradiation.

show abstract

Strain near SiO2–Si interface revealed by X-ray diffraction intensity enhancement

Cited by 15 publications

References 13 publications

Growth and optical properties of Sn–Si nanocomposite thin films

Growth and optical properties of Sn–Si nanocomposite thin films

Electrochemical Passivation and Modification of c-Si surfaces

MeV ion-induced strain at nanoisland-semiconductor surface and interfaces

Contact Info

Product

Resources

About