Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Wang, Xiaolong; Gao, Weiwei; Zhao, Jijun

doi:10.1039/d2cp00670g

Cited by 7 publications

(5 citation statements)

References 62 publications

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“…It has been reported that the carrier injection through interface I is negligible in MoS 2 FETs with Au electrodes in monolayer limits because the region of the MoS 2 film under the contact is depleted [34]. By contrast, considerable contributions from both the two trajectories are found in the ML arsenene FETs with metallic multilayer arsenene electrodes [35] and in ML black phosphorene (BP) FETs with BN-Ni electrodes [36]. Therefore, both the vertical and lateral SBs are analyzed in 2DSC transistors in this paper.…”

Section: Structure Of Schottky Barrier In a 2d Fetmentioning

confidence: 99%

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

et al. 2021

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Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal–2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.

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Section: Structure Of Schottky Barrier In a 2d Fetmentioning

confidence: 99%

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

et al. 2021

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“…A finite-sized heterostructure of 6L-hBN/4L-BP/6L-hBN was considered for mechanical and quantum interactions between BP and hBN layers to ensure a reasonable computational cost for practical ab initio simulations. The band structure was calculated with the optB86b-vdW functional, which reveals a direct band gap at the Γ point, as reported in previous studies for bulk and few-layer BP 27,35,36 . The optB86b-vdW functional was utilized because it can reliably predict both the electronic structure and phonon dispersion of the hBN/BP/hBN heterostructure and bulk hBN, whereas the LDA functional severely underestimates the band gap of 2D vdW materials (Supplementary Fig.…”

Section: First Principles Simulationmentioning

confidence: 79%

Full phonon dispersion along the stacking direction in nanoscale van der Waals materials by picosecond acoustics

Lee,

Bae,

Kim

et al. 2024

npj 2D Mater Appl

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Phonon dispersion in crystals determines many important material properties, but its measurement usually requires large-scale facilities and is limited to bulk samples. Here, we demonstrate the measurement of full phonon dispersion along the stacking direction in nanoscale systems by using picosecond acoustics. A heterostructure sample was prepared consisting of layers of hexagonal boron nitride (hBN) sandwiching a thin layer of black phosphorus (BP), within which a strain pulse was generated by photoexcitation and observed with an optical probe in the BP layer. The strain pulse traverses to the few nanometer thick hBN layers, where it propagates to the edge and echoes back, like acoustic waves in Newton’s cradle. The echoes returning to the BP layer provide information on the frequency-dependent time-of-flight and group velocity dispersion of the sample system. The microscopic origin of the photoinduced strain pulse generation and its propagation is revealed from first principles. Phonon frequency combs observed in the Fourier transform spectrum confirm the strain wave round trips and demonstrate the feasibility of determining group velocity dispersion through photoacoustics.

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“…For example, BP/ TiO 2 heterojunction contributed to efficient exciton dissociation and interfacial charge separation, which is reflected in the H 2 generation rate of the BP/TiO 2 heterojunction, which is 2.4 times higher than that of pure TiO 2 . 127 Additionally, the electronic structure of BPs can be tailored by other structural modifications including strain, 128 elemental doping, 129 and field enhancement. 130 Owing to the atomically low thickness, excitons are tightly bound in monolayer TMDs (especially MoS 2 ) and dominate their optical properties.…”

Section: Other Low-dimensional Exciton Systemmentioning

confidence: 99%

Electric effects reinforce charge carrier behaviour for photocatalysis

Shu,

Qin,

et al. 2024

Energy Environ. Sci.

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Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Abstract: Manipulating exciton is of great significance to explore the optical properties of 2D materials. In this work, we investigate the excitonic properties and carrier dynamics of bilayer black phosphorene by...

Cited by 7 publications

References 62 publications

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Full phonon dispersion along the stacking direction in nanoscale van der Waals materials by picosecond acoustics

Electric effects reinforce charge carrier behaviour for photocatalysis

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