Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis

Borland, John; Komago, Shota; Yokogawa, Ryo; Yoshioka, Kazutoshi; Sawamoto, Naomi; Ogura, Atsushi; Goodman, Gary; Büyüklimanli, Temel

doi:10.1557/s43580-023-00510-8

MRS Advances

2023

DOI: 10.1557/s43580-023-00510-8

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Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis

John Borland¹,

Shota Komago

Ryo Yokogawa

et al.

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Strain/lattice characterization of Si + Ge, SiGe + Ge, SiGe + C and Si + GeSn surface layers formed by implantation with RTA or laser annealing using SIMS, XPS, TEM-EDX, XRD and Raman analysis

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References 5 publications

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