Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers

Jiang, J. C.; Schaper, Andreas; Spika, Z.; Stolz, W.

doi:10.1103/physrevb.62.15826

Cited by 4 publications

(4 citation statements)

References 60 publications

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“…It is also noted that the TA mode does affect the CP line shape but has no appreciable contribution to the LA mode line profile hence the two phase transition anomalies remain unaffected by its appearance. It is worth mentioning that τ exhibits similar temperature dependence as reported for PMN-35%PT crystal [13].…”

Section: Pm -33%pt Single Crystalsupporting

confidence: 77%

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Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Shabbir

Kojima

2009

KEM

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High-resolution Brillouin scattering technique was applied to study the dynamics of central peaks (CPs) in two relaxor ferroelectric systems, PLZT-x/65/35 ceramics and PMN-33%PT [001] single crystals, respectively. It was found that CPs appear very close to an intermediate temperature, Td, for both type of specimens. The temperature dependence of CPs was attributed to the appearance and subsequent growth of polar nanoregions (PNRs) intrinsic to relaxor materials.

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Section: Pm -33%pt Single Crystalsupporting

confidence: 77%

“…The overall intensity factor has different meanings in present case because it represents combined effect of CP and TA mode contrary to Ref. 13 where the coupling between CP and TA mode was ignored.…”

Section: Pm -33%pt Single Crystalmentioning

confidence: 82%

Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Shabbir

Kojima

2009

KEM

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“…[14 -16] Furthermore, the degree of CuPt B -type ordering is suppressed in the presence of LCM. [17] Thus, the upward shifts and linewidth broadenings of the InP-and GaP-like LO phonon modes of the SPS samples with n = 1.7 and n = 2 are not due to an increase in the CuPt B -type ordering but are closely related to the occurrence of LCM. Unlike the n = 1 sample, in which an LCM is observed along the [110] direction, [5] the other samples with n = 1.7 and n = 2 suffer from accumulated strain and, as a result, LCM can occur with more complex patterns in these cases.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering studies of (GaP)_n/(InP)_n (n = 1, 1.7, 2) short‐period superlattice structures

Rho

Lim

Song

et al. 2009

J Raman Spectroscopy

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We report Raman scattering from (GaP) n /(InP) n (n = 1, 1.7, 2) short-period superlattice (SPS) structures to study the effect of lateral composition modulation (LCM) on the behavior of optical phonons. Cross-sectional transmission electron microscope images revealed that LCM was formed with complex pattern in the n = 1.7 and n = 2 samples grown at 490 • C. Interestingly, both the InP-and the GaP-like longitudinal optical (LO) phonon energies increased systematically as the number of monolayers was increased from n = 1 to n = 2. A significant broadening of the phonon line shapes was also observed for the n = 1.7 and n = 2 samples. In contrast, for samples grown at 425 • C, both the increase of the LO phonon energies and the broadening of the phonon line shapes were observed only when n = 1.7. Our results demonstrate that the optical phonons in the (GaP) n /(InP) n SPS structures are significantly affected in the occurrence of LCM related to the growth temperature and the number of monolayers.

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“…Bright field imaging under two beam conditions in conventional TEM has been widely used to obtained information about crystalline quality and compositional modulations in semiconductor materials. [14,[21][22][23][24] Although many evidences in literature have shown the ability to quantify composition in ternary semiconductors grown on binary substrates, using high angle annular dark field (HAADF) [25][26][27][28] and electron energy loss spectroscopy (EELS) [29][30][31][32][33] techniques, in quaternary alloys due to that both cat-ion and an-ion can segregate simultaneously, the influence of neighbour column in the intensity value and the intrinsic 2D projection of these techniques make not reliable the quantification of small compositional fluctuations within these hetero-structures so far [4].…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the compositional modulation of InAlAsSb

Baladés

Sales

Herrera

et al. 2017

Applied Surface Science

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The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM). 1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL) 2 measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.

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Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers

Cited by 4 publications

References 60 publications

Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Raman scattering studies of (GaP)_n/(InP)_n (n = 1, 1.7, 2) short‐period superlattice structures

Effect of annealing on the compositional modulation of InAlAsSb

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Strain-induced modulation versus superlattice ordering in epitaxial (GaIn)P layers

Cited by 4 publications

References 60 publications

Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Dynamics of Central Peaks in the Brillouin Scattering Spectra of Relaxor Ferroelectrics

Raman scattering studies of (GaP)n/(InP)n (n = 1, 1.7, 2) short‐period superlattice structures

Effect of annealing on the compositional modulation of InAlAsSb

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Raman scattering studies of (GaP)_n/(InP)_n (n = 1, 1.7, 2) short‐period superlattice structures