Strain-induced modulation of magnetic interactions in graphene

Power, Stephen R.; Gorman, P. D.; Duffy, J. M.; Ferreira, M. S.

doi:10.1103/physrevb.86.195423

Cited by 23 publications

(20 citation statements)

References 62 publications

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“…The controlled introduction of strain into semiconductors, a key strategy for manipulating the magnetic coupling in 2D nanostructures, has a perfect platform for its implementation in the atomically thin materials in both scientific and engineering applications [48]. Motivated by the search for spintronic materials, a huge number of works have been performed to examine the effectiveness of mechanical strain in modulating the magnetic properties of 2D layered materials [48][49][50][51][52][53][54][55]. To gain insight on how B 2 S nanoribbons can be fruitful in the realization of high-performing magnetic devices, fundamental studies on the strain-induced variation of the electronic and magnetic properties of this new material are essential.…”

Section: B Armchair B2s Nanoribbonsmentioning

confidence: 99%

Tuning the electronic structure and magnetic coupling in armchair B2S nanoribbons using strain and staggered sublattice potential

Zare

2019

Computational Condensed Matter

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Magnetically-doped two dimensional honeycomb lattices are potential candidates for application in future spintronic devices. Monolayer B2S has been recently unveiled as a desirable honeycomb monolayer with an anisotropic Dirac cone. Here, we investigate the carrier-mediated exchange coupling, known as Ruderman-Kittel-Kasuya-Yoshida (RKKY) interaction, between two magnetic impurity moments in armchair-terminated B2S nanoribbons in the presence of strain and staggered sublattice potential. By using an accurate tight-binding model for the band structure of B2S nanoribbons near the main energy gap, we firstly study the electronic properties of all infinitelength armchair B2S nanoribbons (ABSNRs), with different edges, in the presence of both strain and staggered potential.It is found that the ABSNRs show different electronic and magnetic behaviors due to different edge morphologies. The band gap energy of ABSNRs depends strongly upon the applied staggered potential ∆ and thus one can engineer the electronic properties of the ABSNRs via tuning the external staggered potential. A complete and fully reversible semiconductor (or insulator) to metal transition has been observed via tuning the external staggered potential, which can be easily realized experimentally. A prominent feature is the presence of a quasiflat edge mode, isolated from the bulk modes in the ABSNRs belong to the family M = 6p, with M the width of the ABSNR and p an integer number. As a key feature, the position of the quasi-flatbands in the energy diagram of ABSNRs can be shifted by applying the in-plane strains εx and εy. At a critical staggered potential (∆c ∼ 0.5 eV), for nanoribbons of arbitrary width, the quasi-flatband changes to a perfect flatband.The RKKY interaction has an oscillating behaviour in terms of the applied staggered potentials, such that for two magnetic adatoms randomly distributed on the surface of an ABSNR the staggered potential can reverse the RKKY from antiferromagnetism to ferromagnetism and vice versa. The RKKY in terms of the width of the ribbon has also an oscillatory behavior. It is shown that the magnetic interactions between adsorbed magnetic impurities in ABSNRs can be manipulated by careful engineering of external staggered potential. Our findings pave the way for applications in spintronics and pseudospin electronics devices based on ABSNRs. arXiv:1906.10581v1 [cond-mat.mes-hall]

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Section: B Armchair B2s Nanoribbonsmentioning

confidence: 99%

Tuning the electronic structure and magnetic coupling in armchair B2S nanoribbons using strain and staggered sublattice potential

Zare

2019

Computational Condensed Matter

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“…A similar set of oscillations, but without the signchanging feature seen here, was noted for substitutional impurities in strained graphene. 42…”

Section: A Strain Effects On Center-adsorbed Impuritiesmentioning

confidence: 99%

RKKY interaction between adsorbed magnetic impurities in graphene: Symmetry and strain effects

et al. 2013

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The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, with the aim of determining the most energetically favourable alignments between embedded magnetic moments. The RKKY interaction in undoped graphene decays faster than expected for conventional two-dimensional materials and recent studies suggest that the adsorption configurations favoured by many transition-metal impurities may lead to even shorter ranged decays and possible sign-changing oscillations. Here we show that these features emerge in a mathematically transparent manner when the symmetry of the configurations is included in the calculation. Furthermore, we show that by breaking the symmetry of the graphene lattice, via uniaxial strain, the decay rate, and hence the range, of the RKKY interaction can be significantly altered. Our results suggest that magnetic interactions between adsorbed impurities in graphene can be manipulated by careful strain engineering of such systems.

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“…Many researches, hence, focus on the effects of various imperfections on the physical properties of GNRs [13][14][15][16][17][18][19][20][21][22]. The chemisorptions can change greatly the crystal structures and consequently electronic properties of GNRs [5,10,18].…”

Section: Introductionmentioning

confidence: 99%

Transport properties and localization of electronic states in graphene nanoribbons with edge absorptions

Liu

Zhang

2015

J Mater Sci

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We study the effect of edge methylene on transport properties in graphene nanoribbons (GNRs) using the recursive green's function method. The concentration of methylene (w) is defined as the substituted probability of edge dangling bonds. Due to the antiresonance of quasilocalized states, some conductance dips are found when single absorption (w = 0.005 in this work) sits on the edge. Localization analyses of wave functions also confirm this. With w increasing, the conductance is suppressed significantly and transport gap develops near E = 0.0 eV. Conductance suppression is induced by antiresonances between edge scattering centers. Meanwhile, these scattering centers prevent the formation of edge extended states which play an important role in the electronic transport at low energy and consequently the transport gaps develop. We found that a stable gap can be obtained at w = 0.3 and it becomes small as the width of the GNRs increases. An interesting oscillation at transport gaps for armchair edge GNRs is observed and it relates to the geometric symmetry of sample. The physical mechanisms behind the novel phenomenon are still unclear.

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Strain-induced modulation of magnetic interactions in graphene

Cited by 23 publications

References 62 publications

Tuning the electronic structure and magnetic coupling in armchair B2S nanoribbons using strain and staggered sublattice potential

Tuning the electronic structure and magnetic coupling in armchair B2S nanoribbons using strain and staggered sublattice potential

RKKY interaction between adsorbed magnetic impurities in graphene: Symmetry and strain effects

Transport properties and localization of electronic states in graphene nanoribbons with edge absorptions

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