2012
DOI: 10.1063/1.3671788
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Strain-induced magnetoresistance and magnetic anisotropy properties of Co/Cu multilayers

Abstract: [Co (tCo) nm/Cu 1.5 nm]50 multilayers were grown onto 15-nm Cu/polyimide buffer layers. The relationship between stress, σ, and strain, ɛ, for the [Co 1.0 nm/Cu 1.5 nm]50 multilayers has been presented. The effects of induced strain on the magnetoresistance (MR) and magnetic anisotropy have been examined. The [Co 1.0 nm/Cu 1.5 nm]50 multilayer exhibited a maximum MR ratio of 3.4% at a Co layer thickness of 1.0 nm, β of 0.1, and a strain of 1.5%. The multilayers exhibited a remarkable magnetic anisotropy with t… Show more

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Cited by 13 publications
(19 citation statements)
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“…Our paper that was published earlier, describes about this technique in detail [40]. In this review, we show several examples of real and potential applications of materials with perpendicular magnetic anisotropy, PMA: ultra-sensitive sensors, ultra-low power STT-based magnetic random access memory, magnetic switches and logic structures, and detection and therapy.…”
Section: Introductionmentioning
confidence: 99%
See 4 more Smart Citations
“…Our paper that was published earlier, describes about this technique in detail [40]. In this review, we show several examples of real and potential applications of materials with perpendicular magnetic anisotropy, PMA: ultra-sensitive sensors, ultra-low power STT-based magnetic random access memory, magnetic switches and logic structures, and detection and therapy.…”
Section: Introductionmentioning
confidence: 99%
“…In Figure 1c-ii [40], the white big arrows outside the sample show the direction of mechanical force, and the correspondingly induced MA is shown by dark black arrows inside the sample. As shown in this Figure, the easy axis of M is along the perpendicular direction to the direction of .…”
Section: Introductionmentioning
confidence: 99%
See 3 more Smart Citations