Strain Induced k-Linear Spin Splitting in III-V Semiconductors

Skierkowski, A.; Majewski, J. A.

doi:10.12693/aphyspola.112.455

Cited by 5 publications

(4 citation statements)

References 11 publications

(13 reference statements)

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“…However, unlike the LDA calculations of Ref. 35, we did not detect any significant contribution to the spin splitting near the ⌫ point from those higher order terms. Considering the severe underestimation of GaAs band gap by LDA, 36 we suspect that such terms may be important for narrow gap semiconductors and/or higher strains, and will be investigated in future studies of such cases.…”

Section: A Spin Splittingscontrasting

confidence: 99%

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Strain-induced conduction-band spin splitting in GaAs from first-principles calculations

et al. 2008

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We use a recently developed self-consistent GW approximation to perform first-principles calculations of the conduction-band spin splitting in GaAs under ͓110͔ strain. The spin-orbit interaction is taken into account as a perturbation to the scalar relativistic Hamiltonian. These are the calculations of conduction-band spin splitting under deformation based on a quasiparticle approach and, because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin-relaxation time under ͓110͔ strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction-band spin splitting experimentally.

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Section: A Spin Splittingscontrasting

confidence: 99%

“…As it was pointed out in Ref. 35, this procedure is accurate only to the leading order of k and because it ignores the presence of quadratic terms that in principle are allowed by symmetry, and therefore can be present in the ab initio spin splitting but are absent in the Hamiltonian ͓Eq. ͑2͔͒.…”

Section: A Spin Splittingsmentioning

confidence: 99%

Strain-induced conduction-band spin splitting in GaAs from first-principles calculations

et al. 2008

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“…Tuning of bands gaps, varying effective mass of the carriers and shifting of bands are general consequences of strain. However new band splittings happens when the symmetry of a crystal reduces with the strain 47 . Effect of the strain is extensively studied for LR and LD effects 17,46,[48][49][50][51][52] , but effect of strain on PST with PCS is still unknown.…”

Section: Effects Of Strainmentioning

confidence: 99%

Full-plane persistent spin textures with cubic order intrinsic and anisotropic band splitting in bulk Lead-free materials

Sajjan¹,

Bhumla²,

Bhattacharya³

2022

Preprint

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Spin-orbit coupling (SOC) effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena such as electrical control of spin degrees of freedom and spin-to-charge conversion. The materials preserving a uniform spin configuration in the momentum-space, known as persistent spin texture (PST), provide long carrier spin lifetimes through persistent spin helix (PSH) mechanism. However, most of the PST studied till now are attributed to the linear in k splitting and cease to exist locally around certain high-symmetry-point of first Brillouin Zone (FBZ). The persistent spin textures with purely cubic spin splittings have drawn attention owing to unique benefits in spin transport. Here, by using the relativistic first-principles calculations supplemented with k.p analysis, we report the emergence of purely cubic splitting (PCS) belonging to D 3h point group, which is enforced by in-plane mirror and three-fold rotation operations. In addition, the in-plane mirror symmetry operation sustains the PST in larger region (i.e. full planes) of FBZ alongside giant spin splitting. Our results also demonstrate how application of uniaxial strain could be envisaged to tune the magnitude of the PCS, preserving the PST. The observed PSTs provide a route to non-dephasing spin transport with larger spin-Hall conductivity, thus offering a promising platform for future spintronics devices.

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“…C 11 , C 12 are elastic stiffness constants with C 11 C 12 = 0.453, and here we assume that they are equal to those of GaAs. For example, biaxial strain components ε xx = ε yy and ε zz ε xx appear when T d → D 2d reduction of the symmetry takes place, whereas the shear component ε xy is a consequence of the T d → C 2v symmetry reduction [31].…”

Section: Mn-pair With Biaxial Strainmentioning

confidence: 99%

Influence of the different strains’ components on the uniaxial magnetic anisotropy parameters for a (Ga,Mn)As bulk system: A first-principles study

Birowska

2017

Journal of Magnetism and Magnetic Materials

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We present a computational study of the magnetic anisotropy energy for a given concentration of the Mn-ions in the GaAs host, in the framework of the density functional theory. We focus on the influence of a different kind of strains: biaxial, shear, and hydrostatic on the uniaxial magnetic anisotropy parameters K 1 and K 2 , which reflect the magnetic anisotropy energy out-and in-(001) plane, respectively. We have shown that the general trends for the applied biaxial strain on anisotropy parameters are consistent with the experimental data. We have predicted the critical strains, for which the magnetization vector changes its direction. Our results have shown that it is not possible to modify considerably the uniaxial magnetic anisotropy parameters, exposing (Ga,Mn)As to hydrostatic pressure of a magnitude reasonable from experimental point of view.

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Strain Induced k-Linear Spin Splitting in III-V Semiconductors

Cited by 5 publications

References 11 publications

Strain-induced conduction-band spin splitting in GaAs from first-principles calculations

Strain-induced conduction-band spin splitting in GaAs from first-principles calculations

Full-plane persistent spin textures with cubic order intrinsic and anisotropic band splitting in bulk Lead-free materials

Influence of the different strains’ components on the uniaxial magnetic anisotropy parameters for a (Ga,Mn)As bulk system: A first-principles study

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