Strain-induced indium clustering in non-polar a-plane InGaN quantum wells

Lee, Ja Kyung; Park, Bumsu; Song, Kyung; Jung, Woo Young; Tyutyunnikov, Dmitry; Yang, Tiannan; Koch, Christoph T.; Park, Chan Gyung; Aken, Peter A. van; Kim, Young Min; Kim, Jong Kyu; Bang, Junhyeok; Chen, Lei; Oh, Sang Ho

doi:10.1016/j.actamat.2017.11.039

Cited by 8 publications

(3 citation statements)

References 44 publications

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“…On the other hand, it decreases by 510% under +1.4% tensile strains. Previous studies utilized various techniques to reduce/modulate internal polarization, including the use of a nonpolar substrate [128], tailoring the band energy structure [129][130][131], and inverting the growth sequence [132]. Jiang et al [127] used the electrochemical etching technique and explained the photoluminescence and wavelength characteristics of single-quantum-well InGaN/GaN heterostructure membranes at room temperature by applying compressive and tensile strains, as shown in Figure 6a,b.…”

Section: Optimizing Performances Via the Piezo-phototronic Effectmentioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

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The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al2O3 on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al2O3 on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.

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Section: Optimizing Performances Via the Piezo-phototronic Effectmentioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

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“…In this study, we present the strain mapping of an axial In 0.3 Ga 0.7 N/GaN NW heterostructure by using two complementary methods which are high-resolution scanning transmission electron microscopy (STEM) image-based geometrical phase analysis (GPA) [17][18][19] and dark-field inline electron holography (DIH). [20][21][22] We found that the InGaN QDs feature a truncated hollow dome shape, surrounded by an approximately 10 nmthick epitaxial GaN shell layer. The overall strain distribution within the NW heterostructure is reproduced well by the GPA of high-resolution STEM images.…”

Section: Introductionmentioning

confidence: 99%

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

et al. 2022

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Growing an In x Ga 1− x N/GaN (InGaN/GaN) multi‐quantum well (MQW) heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light‐emitting diodes (LEDs) based on the conventional planar heterostructure. The epitaxial strain induced in InGaN/GaN MQW heterostructure can be relaxed through the sidewalls of NW, which is beneficial to LEDs because a much larger misfit strain with higher indium concentration can be accommodated with reduced piezoelectric polarization fields. The strain relaxation, however, renders highly complex strain distribution within the NW heterostructure. Here the authors show that complementary strain mapping using scanning transmission electron microscopy and dark‐field inline holography can comprehend the strain distribution within the axial In 0.3 Ga 0.7 N/GaN MQW heterostructure embedded in GaN NW by providing the strain maps which can cover the entire NW and fine details near the sidewalls. With the quantitative evaluation by 3D finite element modelling, it is confirmed that the observed complex strain distribution is induced by the strain relaxation leading to the strain partitioning between InGaN quantum disk, GaN quantum well, and the surrounding epitaxial GaN shell. The authors further show that the strain maps provide the strain tensor components which are crucial for accurate assessment of the strain‐induced piezoelectric fields in NW LEDs.

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“…Further, there are many reports in the literature which hinting that indium (In) has a tendency of forming metallic cluster (or segregation) inside the material. This has a detrimental effect to the device performance of In-based semiconductors [23][24][25][26][27][28]. Further ZnSnP 2 which has a experimental E g of ≈ 1.7 eV shows a order-disorder phase transition at high temperature which reduce the E g to 0.75 eV [29].…”

Section: Introductionmentioning

confidence: 99%

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

Kumar,

Nayak,

Chakrabarty

et al. 2019

Preprint

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Using machine learning (ML) approach, we unearthed a new III-V semiconducting material having an optimal bandgap for high efficient photovoltaics with the chemical composition of Gallium-Boron-Phosphide (GaBP 2 , space group: Pna2 1 ). ML predictions are further validated by state of the art ab-initio density functional theory (DFT) simulations. The stoichiometric Heyd-Scuseria-Ernzerhof (HSE) bandgap of GaBP 2 is noted to 1.65 eV, a close ideal value (1.4-1.5 eV) to reach the theoretical Queisser-Shockley limit. The calculated electron mobility is similar to that of silicon. Unlike perovskites, the newly discovered material is thermally, dynamically and mechanically stable. Above all the chemical composition of GaBP 2 are nontoxic and relatively earth-abundant, making it a new generation of PV material. Using ML, we show that with a minimal set of features the bandgap of III-III-V and II-IV-V semiconductor can be predicted up to an RMSE of less than 0.4 eV. We presented a set of scaling laws, which can be used to estimate the bandgap of new III-III-V and II-IV-V semiconductor, with three different crystal phases, within an RMSE of ≈ 0.5 eV.

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Strain-induced indium clustering in non-polar a-plane InGaN quantum wells

Cited by 8 publications

References 44 publications

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

High‐Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

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