2020
DOI: 10.1016/j.mtcomm.2020.101348
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Strain-induced effects in the electronic and optical properties of Na0.5Bi0.5TiO3: An ab-initio study

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Cited by 12 publications
(9 citation statements)
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“…A Tauc plot shows the absorption edge of the sample, and extrapolated values show a band gap of 3.07 eV for the bulk sample, while the exfoliated sample has a relatively higher band gap of 3.91 eV, indicative of a blue shift due to quantum confinement. bismuth titanate is reported to have an indirect band gap of ∼3 eV, while lots of different transitions are also observed in the absorption spectra. A transition from an indirect to a direct transition is reported in materials undergoing strain and structural changes . Such a probable shift in the transition can also be investigated in detail in view of the obtained optical data.…”
Section: Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…A Tauc plot shows the absorption edge of the sample, and extrapolated values show a band gap of 3.07 eV for the bulk sample, while the exfoliated sample has a relatively higher band gap of 3.91 eV, indicative of a blue shift due to quantum confinement. bismuth titanate is reported to have an indirect band gap of ∼3 eV, while lots of different transitions are also observed in the absorption spectra. A transition from an indirect to a direct transition is reported in materials undergoing strain and structural changes . Such a probable shift in the transition can also be investigated in detail in view of the obtained optical data.…”
Section: Results and Discussionmentioning
confidence: 99%
“…20−22 A transition from an indirect to a direct transition is reported in materials undergoing strain and structural changes. 23 Such a probable shift in the transition can also be investigated in detail in view of the obtained optical data.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The most common self‐defects in complex semiconductors are vacancies and antisite defects between anions and cations (i.e. A ions on B sites) 28 . In the following sections, we have investigated and discussed the influence of self‐defects on the magnetic and dielectric properties of the BNT (110) surface.…”
Section: Resultsmentioning
confidence: 99%
“…A ions on B sites). 28 In the following sections, we have investigated and discussed the influence of self-defects on the magnetic and dielectric BNT induce magnetism and dielectric properties, respectively. 26 In particular, Na-antisite exhibits the p-type, while Bi-antisite exhibits the n-type semiconductor.…”
Section: Resultsmentioning
confidence: 99%
“…Such a high cutoff was found necessary to converge to the phonon dispersion curves. The Brillouin zone was sampled with 6 × 6 × 6 kpoints Monkhorst-Pack meshes for primitive cells of R3c phases of BNT-BZT-xGaN [23][24].…”
Section: Calculation Of Phonon Dispersion Dos and Phonon Group Velocitymentioning
confidence: 99%