2009
DOI: 10.1007/s10853-009-3503-y
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Strain-induced artificial multiferroicity in Pb(Zr0.53Ti0.47)O3/Pb(Fe0.66W0.33)O3 layered nanostructure at ambient temperature

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Cited by 22 publications
(8 citation statements)
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“…DOI: 10.1103/PhysRevLett.117.107403 Multiferroic phenomena are often summarized in a Venn diagram showing the intersection of ferromagnetic, ferroelectric, and ferroelastic orders [1], each with its own control field. Numerous electric methods of magnetization control use elastic strain to leverage magnetoelectric (ME) properties in solids [2][3][4] and in magnetostrictiveelectrostrictive structures [5][6][7][8]. The expected technological benefit is the possibility of low-power [9][10][11] operation down to the nanoscale [12][13][14][15].…”
mentioning
confidence: 99%
“…DOI: 10.1103/PhysRevLett.117.107403 Multiferroic phenomena are often summarized in a Venn diagram showing the intersection of ferromagnetic, ferroelectric, and ferroelastic orders [1], each with its own control field. Numerous electric methods of magnetization control use elastic strain to leverage magnetoelectric (ME) properties in solids [2][3][4] and in magnetostrictiveelectrostrictive structures [5][6][7][8]. The expected technological benefit is the possibility of low-power [9][10][11] operation down to the nanoscale [12][13][14][15].…”
mentioning
confidence: 99%
“…It has been known for several years [1][2][3][4][5][6] that the perovskite oxides PbFe 1/2 Ta 1/2 O 3 (PFT), PbFe 1/2 Nb 1/2 O 3 (PFN), and PbFe 2/3 W 1/3 O 3 (PFW) are multiferroics with long-range magnetic ordering near or above room temperature. Our earlier studies showed [7][8][9][10][11][12][13][14][15][16][17] that solid solutions of these materials with PbZr x Ti 1Àx O 3 and pure PbTiO 3 yielded single-phase ferroelectric crystals whose weak ferromagnetism persists to room temperature or above. The low electrical conductivity of these materials thus produced a good alternative to BiFeO 3 for commercial device materials with intended embodiments as multiferroic memories, 18-21 sensors, 22 or voltage-controlled magnetic tunnel junctions [23][24][25] or THz generators.…”
mentioning
confidence: 99%
“…3 ('PZT') have been under study for several years in a San Juan-Cambridge-Belfast collaboration that now includes Delhi. [32][33][34][35][36][37][38][39][40] The reason is shown in the Venn diagram in Figure 4. Each of the Fe-compounds is ferromagnetic at modest temperatures and ferroelectric at low temperatures.…”
Section: Copper Oxidementioning
confidence: 99%
“…Consequently, it is reasonable to invoke magnetostriction in its switching dynamics at higher temperatures in an applied field H. PFN. Magnetic and electrical studies of PFN and of PFN mixed with PbMg 1/2 W 1/2 O 3 by Peng et al [40][41][42] revealed several important things: PFN can be prepared in a single phase, without any pyrochlore or other minor phases; it exhibits relaxor behavior characterized by antiferromagnetic clusters and by two equations-a standard Vogel-Fulcher Equation describing a characteristic relaxation frequency…”
Section: Lead-iron Perovskitesmentioning
confidence: 99%