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Plumhof, J. D.; Křápek, Vlastimil; Ding, Fei; Joens, Klaus D.; Hafenbrak, R.; Klenovský, Petr; Herklotz, Andreas; Dörr, K.; Michler, Peter; Rastelli, Armando; Schmidt, Oliver G.

doi:10.1103/physrevb.83.121302

Cited by 85 publications

(116 citation statements)

References 28 publications

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“…We believe that the correlation between emission energy and size of the dot can not be predicted in a straightforward manner especially when studying a large statistical ensemble of individual dots. Therefore it is difficult to establish general trends for the exciton fine structure versus the dots size unless an external field, like an electric field, 27 or stress applied to the structure, 17,28 is used to tune the fine structure splitting.…”

Section: Discussionmentioning

confidence: 99%

“…In strain-free GaAs QDs grown by droplet epitaxy it has been shown that VBM exists due to the anisotropy of the confinement potential, 15 while in strained self-assembled InAs/GaAs QDs, VBM effects have been investigated in order to estimate the exciton spin relaxation time, 16 its influence on the exciton FSS, 17,18 or the hyperfine coupling. 19 To our knowledge, no experimental study includes both strain effects and confinement anisotropy in order to explain the observed results, which can be fully described by combining the Luttinger-Kohn and the Bir-Pikus Hamiltonians.…”

Section: Introductionmentioning

confidence: 99%

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Polarization properties of excitonic qubits in single self-assembled quantum dots

et al. 2012

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We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, luminescence polarization along the growth axis has been observed revealing the presence of shear components of the deformation tensor out of the growth plane. Resonant luminescence experiments allowed determining the oscillator strength ratio of the two exciton eigenstates. Valence band mixing governs this ratio and can be very different from dot to dot, however the polarization anisotropy axis is quite fixed inside a scanned area of one µm 2 and indicates that the in-plane deformation direction to which it is related has a correlation length of the order of magnitude of one µm 2 .

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polarization properties of excitonic qubits in single self-assembled quantum dots

et al. 2012

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“…Another class of approaches is based on in-operation tuning, where the originally large value of FSS is reduced by applying the external field: electric, 11,12 magnetic, 2,13 or strain. The external strain field allowed to reach FSS below experimental resolution in GaAs/AlGaAs QDs; 14,15 the simultaneous application of electric field allowed for a more powerful symmetry restoration and rather universal recovery of low FSS. 16 Various effects contributing to the FSS can be divided into two classes based on the involved length scale: atomic and macroscopic.…”

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confidence: 99%

Excitonic fine structure splitting in type-II quantum dots

2015

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Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the morphology of the structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.

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“…Figure 3 by Refs. [8,31,32]. Another obvious observation is that the optical polarization axes of the QD under the misaligned uniaxial stresses are no longer aligned to either the x-or the y-axes, but directed in between and accompanied with significant changes of the magnitudes of the FSS and DOP.…”

Section: Misaligned Stressesmentioning

confidence: 88%

Mechanically encoded single-photon sources: Stress-controlled excitonic fine structures of droplet epitaxial quantum dots

2015

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We present numerical investigations based on the Luttinger-Kohn four-band k · p theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uni-axial stress control. In the formalisms, stressing a photo-excited quantum dot is equivalent creating a pseudo-magnetic field that is directly coupled to the pseudo-spin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band-mixing of exciton that is especially sensitive to external stress in inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dots and allows us to mechanically design and prepare any desired exciton states of QD photon sources prior to the photon generation.

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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1−xAs and In
J. D. Plumhof
¹
,
Vlastimil Křápek
²
,
Fei Ding
³

et al.

Cited by 85 publications

References 28 publications

Polarization properties of excitonic qubits in single self-assembled quantum dots

Polarization properties of excitonic qubits in single self-assembled quantum dots

Excitonic fine structure splitting in type-II quantum dots

Mechanically encoded single-photon sources: Stress-controlled excitonic fine structures of droplet epitaxial quantum dots

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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1−xAs and InJ. D. Plumhof1, Vlastimil Křápek2, Fei Ding3 et al.

Cited by 85 publications

References 28 publications

Polarization properties of excitonic qubits in single self-assembled quantum dots

Polarization properties of excitonic qubits in single self-assembled quantum dots

Excitonic fine structure splitting in type-II quantum dots

Mechanically encoded single-photon sources: Stress-controlled excitonic fine structures of droplet epitaxial quantum dots

Contact Info

Product

Resources

About

Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1−xAs and In
J. D. Plumhof
¹
,
Vlastimil Křápek
²
,
Fei Ding
³

et al.